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短波碲镉汞光伏器件的低频噪声研究 被引量:11

Low frequency noise study on short wavelength HgCdTe photodiodes
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摘要 对所研制的短波光伏碲镉汞器件进行了变温电流 电压特性和低频噪声研究 ,测试温度范围 2 5 5— 2 93K .实验结果表明随着温度的下降 ,器件的优值因子R0 A从 4 5× 10 3Ωcm2 增加到 7× 10 4 Ωcm2 .器件在低频区的主要噪声成分是 1 f噪声和产生 复合噪声 ,在高频区主要是散粒噪声 .在测试的偏压内 ,器件的 1 f噪声功率谱密度与流过器件的电流的平方成正比 ,器件的Hooge系数为 3× 10 - 4— 7× 10 - 4.从噪声功率谱密度曲线分析中得到产生 复合噪声的特征时间常数τ ,通过τ的温度特性得到了器件的深能级 . The current-voltage characteristics and the low frequency noise measured at 255-293K are reported. The figures of merit increase from 4.5 x 10(3) to 7 x 10(4) &UOmega; cm(2) as the temperatures decreases. At low frequencies the noise mainly consists of flicker noise and generation recombination (g-r) noise, while at high frequencies thermal noise is the dominant component. The flicker noise current is proportional to the detector current at reverse bias, and the Hooge parameter α(H) of the device is (3-7) X 10(-4). In addition, the fluctuation time constant τ of the g-r noise is extracted by fitting the curve of the low-frequency noise. Therefore, the trap thermal activation energy of the deep level is obtained from the relation between τ and temperature.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2005年第5期2261-2266,共6页 Acta Physica Sinica
关键词 碲镉汞 优值因子 低频噪声 深能级 半导体 HgCdTe figure of merit low frequency noise deep level
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