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光电耦合器电流传输比的噪声表征 被引量:12

Noise as a Representation for CTR of Optoelectronic Coupled Devices
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摘要 光电耦合器中可俘获载流子的陷阱密度是影响其电流传输比(CTR)的重要因素,并与器件可靠性有密切关系.在器件内部的多种噪声中,1/f噪声可有效地表征器件陷阱密度.本文在研究光电耦合器工作原理以及1/f噪声理论的基础上,建立了光电耦合器的CTR表征模型和1/f噪声模型.在输入电流宽范围变化的条件下,测量了器件的电学噪声和CTR变化,实验结果验证了以上模型的正确性.将CTR模型与噪声模型相结合,得到了CTR与1/f噪声之间的关系.此关系应用于对光电耦合器辐照实验结果的分析,实验结果与理论得到的结论一致.理论与实验结果表明,噪声幅值越大,电流指数越接近于2,则器件的可靠性越差,相同工作条件下CTR的老化衰减量越大,其失效率显著增大.从而证明噪声可表征光电耦合器的CTR并能准确地反映器件的可靠性. Based on study of the principle of OCDs and the theory of 1/f noise,we present a CTR model and 1/f noise model of OCDs. The electric noise and CTR of OCDs are measured over a wide range of currents, and the experimental results agree well with the proposed models. By integrating the CTR model and 1/f noise model,a relationship between CTR degradation and 1/f noise is further studied. The relationship is used to analyze irradiation experiments, and results agree precisely with the theoretical model. This proves by theory and experiment that the larger the noise magnitude, the closer the current exponent is to 2,leading to the degradation of device reliability and significant degradation of the CTR. Consequently,it is shown that noise can represent not only the CTR of OCDs but also the reliability of the device.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第4期597-603,共7页 半导体学报(英文版)
基金 国家自然科学基金(批准号:60276028) 国防预研基金(批准号:51411040601DZ014) 国防科技重点实验室基金(批准号:51433030103DZ01)资助项目~~
关键词 1/f噪声 光电耦合器 电流传输比 陷阱 1/f noise OCDs CTR traps
作者简介 通信作者.Email;hujin007@eyou.com
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参考文献11

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