摘要
采用直流磁控溅射工艺,在室温条件下制备了ZnO∶Al(ZAO)薄膜,研究了Al掺杂量和溅射工艺参数等对ZAO薄膜光电性能的影响。结果表明:Al掺杂量和溅射工艺参数均对薄膜的电阻率有显著影响,在Al掺杂质量分数为3%、溅射功率为100W以及Ar压强为1.5Pa的条件下,室温溅射淀积的ZAO薄膜可获得1.4×10-3Ω.cm的最小电阻率;Al掺杂量和工艺参数对薄膜的透光率均无明显的影响,薄膜的平均透光率在86～90%,但随Al掺杂量和溅射功率的增加,薄膜的截止吸收边均向短波长方向移动。对薄膜优值因子的分析表明,适合采用的Ar压强值在0.6～2.0Pa。
ZnO：Al （ZAO） thin films based on Al doped ZnO ceramic target were prepared on slide glass substrates by DC magnetron sputtering at room temperature. The effects of Al doping content and sputtering parameter on electrical and optical properties of ZAO thin films were investigated. The experimental results show that both the Al content and process parameters have a great influence on electrical property. When the Al content is 3%, the sputtering power is 100 W, the argon gas pressure is 1.5 Pa, ZAO thin films have a lowest resistivity of 1.4×10^-3 Ω·cm. The Al doping content and process parameters had a little influence on transmittance, and the average transmittances of ZAO thin films were from 86% to 90%, but the absorption edge has a blue shift with the increase of doping level and argon gas pressure. According to the analyses of FOM （figure of merit ） of ZAO, an argon pressure of 0.6-2.0 Pa is appropriate for ZAO thin films deposited by DC magnetron sputtering at room temperature.
出处
《液晶与显示》
CAS
CSCD
北大核心
2009年第1期52-56,共5页
Chinese Journal of Liquid Crystals and Displays
基金
广西高校百名中青年学科带头人资助计划项目(No.RC20060809014)
关键词
氧化锌铝
透明导电薄膜
光电性能
磁控溅射
ZAO
transparent conducting thin films
electrical and optical properties
magnetron sputtering
作者简介
任明放（1957-），女，山西大同人，高级实验师，主要从事光电材料与应用研究。E-mail： wh65 @guet. edu. cn;
