摘要
采用射频磁控溅射法在有机柔性衬底上制备出了SnO2: Sb透明导电膜,讨论了薄膜的结构和光电性质对制备条件的依赖关系。制备的样品为多晶薄膜,并且保持了二氧化锡的金红石结构。对衬底适当地加热,当衬底温度为200℃时,在PI(聚酰亚胺)胶片上制备出了性能良好的薄膜,薄膜相应自由载流子霍耳迁移率的最大值为13.9cm2/V·s,载流子浓度为15.5×1019 cm-3,薄膜电阻率的最小值为3.7×10-3W·cm。在可见光范围内,样品的相对透过率为85%左右。
Transparent conducting SnO2: Sb films were deposited on organic substrates by RFmagnetron-sputtering. The structural and photoelectric properties of the films dependence ofpreparation condition are discussed. Polycrystalline films still retained the rutile structure. Tansparentconducting SnO2:Sb films with good properties were deposited on PI substrate when substrates wereheated properly. At 200℃ substrates temperature, carrier concentration and Hall mobility of filmshave the maximum value of 15.5×1019 cm-3 and 13.9cm2/V·s respectively, as well as resistivity hasminor value of 3.7×10-3W·cm. The average transmittance reaches 85% in visible region.
出处
《半导体技术》
CAS
CSCD
北大核心
2002年第12期64-67,共4页
Semiconductor Technology
基金
山东省基金赞助课题(1997602)
关键词
磁控溅射法
制备
SNO2
Sb透明导电膜
organic substrates
antimony-doped tin oxide films
RF magnetron sputtering
