摘要
采用直流磁控溅射法,分别用ITO陶瓷靶、In-Sn合金靶,在玻璃基片上镀膜。研究ITO透明导电膜其膜厚、靶材、溅射气压和溅射速率等工艺对光电特性的影响。结果表明,采用陶瓷靶镀膜要比合金靶效果好,膜厚70nm以上、溅射气压0.45Pa和溅射速率23nm/min左右为最佳工艺条件,并得到了ITO薄膜电阻率1.8×10–4Ω.cm、可见光透过率80%以上。
ITO conductive films respectively with ITO target and In-Sn target were deposited on glass substrates by DC magnetron sputtering method. The influence of the film thickness, the target, the sputtering pressure and the sputtering speed was studied. The experimental results show that ITO target is better than In-Sn target, that the optimum condition of the film thickness beyond 70 nm, the sputtering pressure about 0.45 Pa, the sputtering speed about 23 nm/min were obtained, and that the better electrical and optical parameters of the thin films with resistivity 1.8×10^-4Ω·cm and visible light transmissivity beyond 80% were obtained.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2005年第9期39-41,共3页
Electronic Components And Materials
基金
河南省科技攻关项目(001090210)
关键词
半导体技术
ITO膜
磁控溅射
电阻率
透光率
semiconductor technology
ITO film
magnetron sputtering
resistivity
transmissivity
作者简介
通讯作者：辛荣生 辛荣生（1959-），男，辽宁抚顺人，副教授：研究方向：无机功能材料。Tel：（0371）67636215；E-mail：xinrongsheng@zzu．edu．cn。
