摘要
基于微电子机械系统(MEMS)工艺,给出一种硅基高压电容器结构及工艺制作方法。设计得到了容值为2 nF、芯片尺寸为2 mm×2 mm×0.3 mm的硅基电容器。研究了制作该结构的工艺方案,解决了工艺过程中的关键技术,并给出了工艺结果。最终,实现了硅基高压电容器结构的工艺制作和测试。测试结果表明,获得的高压电容器的容值与设计值基本一致,击穿电压可以达到280 V,验证了工艺路线的可行性。
Based on micro electromechanical systems (MEMS) technology,a silicon-based high-voltage capacitor structure and manufacturing method are proposed.A silicon-based capacitor with a capacitance of 2 nF and a chip size of 2 mm x 2 mm x 0.3 mm is designed.The process plan for producing this structure is studied,the key technologies in the process are solved,and the process results are provided.Finally,the process production and testing of silicon-based high-voltage capacitor structures are achieved.The test results show that the capacitance value of the obtained high-voltage capacitor is basically consistent with the design value,and the breakdown voltage can reach 280 V,verifying the feasibility of the process route.
作者
杨志
董春晖
王敏
王敬轩
商庆杰
付兴中
张力江
YANG Zhi;DONG Chunhui;WANG Min;WANG Jingxuan;SHANG Qingjie;FU Xingzhong;ZHANG Lijiang(The 13th Research Institute of CETC,Shijiazhuang 050051,China)
出处
《电子工艺技术》
2024年第6期19-21,共3页
Electronics Process Technology
作者简介
杨志(1985-),男,硕士,工程师,主要从事射频微机械器件工艺的研究工作。
