摘要
电极成型技术是红外焦平面探测器的重要组成部分,离子束刻蚀技术由于具有高各向异性和高分辨率等诸多优点,适用于制备低损伤、高均匀性以及可生产性的电极体系。本文采用离子束刻蚀制备了平面型、台面型器件的电极结构,通过FIB和SEM表征了不同刻蚀条件下的电极形貌和结构,研究了不同刻蚀角度、能量以及热处理对碲镉汞红外探测器的影响。结果表明,离子束刻蚀技术具有侧边平滑、均匀性高、稳定性强以及工艺重复性好等诸多优点。另外,离子束刻蚀可以实现台面结器件的电极隔离,但台面侧壁存在一定金属电极残留,需要进一步优化台面形貌和刻蚀角度。在热处理对刻蚀的影响上,低能量刻蚀形成的晶格损伤,经过高温可以修复;高能量刻蚀将同时造成晶格损伤和电学损伤,热处理只能一定程度上改善pn结性能,电学损伤将在刻蚀后表面形成严重的漏电效应,降低了探测器的品质因子R_(0)A。
Electrode shaping technology is an important part of infrared detector,and ion beam etching technology is suitable for preparation of low-damage,high-uniformity and productive electrode systems due to its many advantages such as high anisotropy and high resolution.In this paper,the electrode structures of the planar and mesa devices are prepared by ion beam etching.The morphology and structure of the electrodes under different etching conditions are characterized by FIB and SEM,and the effects of different etching angles,energies as well as heat treatment on the infrared detector are studied.The results show that the ion beam etching technology has many advantages such as smooth sidewalls,high uniformity,strong stability,and high process repeatability.Moreover,ion beam etching can also achieve electrode isolation of mesa junction devices,but there are certain metal electrodes on the sidewall of the mesa,which require further optimization of the etching angle.On the effect of heat treatment on etching,the lattice damage caused by low energy etching can be repaired after high temperature activation.High energy etching causes both lattice and electrical damage,and heat treatment can only improve the performance of the PN junction to a certain extent.The Electrical damage forms a serious leakage effect on the surface of the PN junction,weakening the quality factor R_(0)A of the detector.
作者
宁提
何斌
刘静
徐港
NING Ti;HE Bin;LIU Jing;XU Gang(North China Research Institution of Electro-Optics,Beijing 100015,China)
出处
《激光与红外》
CAS
CSCD
北大核心
2024年第9期1410-1416,共7页
Laser & Infrared
