摘要
采用统计实验方法研究了利用SF6/O2/CHF3混合气体产生的等离子体进行硅的反应离子刻蚀技术。为了优化刻蚀条件,将刻蚀速率和选择比表示为SF6、O2、CHF3各自的流量以及气压和射频功率的函数。文中讨论了各种变量的变化对刻蚀速率和选择比的影响以及刻蚀机理,证实了加入CHF3可以显著地减小表面粗糙的结论。
RIE of Si using SF 6 /O 2 /CHF 3 plasmas was studied. The characteristics of the etch process are explored using a statistical experimental design. Etch rate and selectivity are examined as a function of SF 6 flow, O 2 flow, CHF 3 flow, pressure and the RF power in order to optimize etching condition. The effects of the variables on the measured responses and the etch mechanism are discussed. It is found that the addition of CHF 3 to the SF 6 /O 2 plasma can produce more smooth etch surface.
出处
《半导体技术》
CAS
CSCD
北大核心
2005年第6期28-31,共4页
Semiconductor Technology
基金
中国博士后研究基金(2002031254)
