摘要
介绍了超级结MOS器件的一种主流工艺—深沟槽单次外延工艺,详细介绍了该工艺的工艺流程及特点。基于超级结MOS器件的电荷平衡原理,分析不同P柱浓度条件下器件击穿电压(Breakdown Voltage)的变化规律,揭示击穿电压(BV)偏低的原因,提出一种改善方案,最终通过实验验证该方案的可行性。
In this paper,a mainstream technology for manufacturing super junction MOS(SJMOS)devices,namely the Deep Trench Single Epitaxial Process(DTSE),is introduced.And the flow and characteristics of DTSE are described in detail.Based on the charge balance principle of SJMOS,the variation of breakdown voltage(BV)under different P-pillar doping concentrations is analyzed,revealing the reasons for the low BV.A improvement solution is proposed,and its feasibility is demonstrated through the experimental verification.
作者
田俊
付振
张泉
肖超
张文敏
王悦
TIAN Jun;FU Zhen;ZHANG Quan;XIAO Chao;ZHANG Wenmin;WANG Yue(Beijing Zhixin Microelectronics Technology Co.,LTD,Beijing 102200,China;Beijing Xinkejian Technology Co.,LTD,Beijing 102200,China)
出处
《集成电路与嵌入式系统》
2024年第6期46-54,共9页
INTEGRATED CIRCUITS AND EMBEDDED SYSTEMS
关键词
超级结MOS
电荷平衡
深沟槽
P柱宽度调整
耐压BV
super junction MOS
charge balance
deep trench
P pillar width adjustment
voltage withstand BV
作者简介
通信作者:田俊,长期从事高性能、高可靠超结功率MOSFET芯片高深宽比沟槽刻蚀、高质量外延、光刻等关键工艺模块开发及良率提升技术,E-mail:tianjun@sgchip.sgcc.com.cn。
