摘要
首次指出了超结IGBT这一新型功率半导体器件独特的导通机理并对其作了详细分析。通过TMA-MEDICI仿真验证,超结IGBT耐压能力和正向导通能力都明显优于普通IGBT。并且发现,不同N柱、P柱掺杂浓度下器件的导通模式会在单极输运和双极输运之间相互改变,而这一特性是超结IGBT所独有的。也正是这一特殊的导通机理使得超结IGBT的Eoff-Von关系得到了突破性的改进。此外,结合超结技术的基本理论详细分析了电荷非平衡效应对超结IGBT器件耐压能力的影响,给出了耐压区N柱、P柱掺杂浓度的合理取值范围。
In this paper, we introduce super-junction IGBT, also called SJ-IGBT and point out its unique conducting mechanism first time. Through extensive numerical simulation using TMA-MEDIC, it is found that the net doping concentration of N-pillar and P-pillar greatly influence the on-state characteristics of SJ-IGBT. The SJ-IGBT has a mixed conducting mechanism of bipolar transportation and unipolar transportation, which is different from any other power semi- conductor device. Just for this unique characteristic, SJ-IGBT can greatly improve the relationship between on-state voltage and turn-off energy loss. In addition, we also discuss device＇ s blocking capability under different N-pillar ＆ P-pillar doping concentration and the influence of charge imbalance effect.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2011年第6期545-548,600,共5页
Research & Progress of SSE
关键词
超结
绝缘栅双极晶体管
电荷非平衡
击穿电压
导通压降
关断损耗
super-junction
IGBT （insulated gate bipolar transistor）
charge imbalance
breakdown voltage
on-state voltage
turn off energy loss
作者简介
联系作者：E-mail：twotiger007@163．com王永维（WANGYongwei）男，1987年8月12日出生，山西省晋中市人，硕士研究生，主要研究方向为半导体功率器件及智能功率集成电路。
