摘要
Von Neumann computers are currently failing to follow Moore’s law and are limited by the von Neumann bottleneck.To enhance computing performance,neuromorphic computing systems that can simulate the function of the human brain are being developed.Artificial synapses are essential electronic devices for neuromorphic architectures,which have the ability to perform signal processing and storage between neighboring artificial neurons.In recent years,electrolyte-gated transistors(EGTs)have been seen as promising devices in imitating synaptic dynamic plasticity and neuromorphic applications.Among the various electronic devices,EGT-based artificial synapses offer the benefits of good stability,ultra-high linearity and repeated cyclic symmetry,and can be constructed from a variety of materials.They also spatially separate“read”and“write”operations.In this article,we provide a review of the recent progress and major trends in the field of electrolyte-gated transistors for neuromorphic applications.We introduce the operation mechanisms of electric-double-layer and the structure of EGT-based artificial synapses.Then,we review different types of channels and electrolyte materials for EGT-based artificial synapses.Finally,we review the potential applications in biological functions.
基金
the National Key R&D Program of China(No.2017YFA0303604 and 2019YFA0308500)
the Youth Innovation Promotion Association of CAS(No.2018008)
the National Natural Science Foundation of China(Nos.12074416,11674385,11404380,11721404,and 11874412)
the Key Research Program of Frontier Sciences CAS(No.QYZDJSSW-SLH020).
作者简介
Heyi Huang got her PhD degree in 2020 at Institute of Physics,Chinese Academy of Sciences under the supervision of Prof.Kuijuan Jin and Prof.Chen Ge.Her research focuses on thin film transistors and neuromorphic computing devices;Correspondence to:Chen Ge is currently an associate professor at the Institute of Physics,Chinese Academy of Sciences.He received PhD degree from Institute of Physics,Chinese Academy of Sciences in 2012.His research interests include electrolyte-gated synaptic transistors and ferroelectric synapses.gechen@iphy.ac.cn;Correspondence to:Kuijuan Jin received her PhD degree and became a professor at the Institute of Physics,Chinese Academy of Sciences in 1995 and 2004,respectively.She is a Fellow of the Institute of Physics of UK and a Fellow of the American Physical Society.Her main research is in the crossing area of optics and low dimensional perovskite oxides.kjjin@iphy.ac.cn。
