摘要
With the atomically sharp interface and stable switching channel, van der Waals(vdW) heterostructure memristors have attracted extensive interests for the application of high-density memory and neuromorphic computing. Here, we demonstrate a new type of vdW heterostructure memristor device by sandwiching a single-crystalline h-BN layer between two thin graphites. In such a device, a stable bipolar resistive switching(RS) behavior has been observed for the first time. We also characterize their switching performance, and observe an on/off ratio of >10^(3) and a minimum RESET voltage variation coefficient of3.81%. Our work underscores the potential of 2D materials and vdW heterostructures for emerging memory and neuromorphic applications.
基金
supported by Laboratory of Solid State Microstructures,Nanjing University(M34049)
the Jiangsu Postdoctoral Research Funding Program under Grant No.2021K451C。
作者简介
Yafeng Deng,contributed equally to this work;contributed equally to this work/Correspondence to:Yixiang Li,liyx@nju.edu.cn;Correspondence to:Dong Wang,xjrshwd@henau.edu.cn。
