摘要
Low-power and low-variability artificial neuronal devices are highly desired for high-performance neuromorphic computing.In this paper,an oscillation neuron based on a low-variability Ag nanodots(NDs)threshold switching(TS)device with low operation voltage,large on/off ratio and high uniformity is presented.Measurement results indicate that this neuron demonstrates self-oscillation behavior under applied voltages as low as 1 V.The oscillation frequency increases with the applied voltage pulse amplitude and decreases with the load resistance.It can then be used to evaluate the resistive random-access memory(RRAM)synaptic weights accurately when the oscillation neuron is connected to the output of the RRAM crossbar array for neuromorphic computing.Meanwhile,simulation results show that a large RRAM crossbar array(>128×128)can be supported by our oscillation neuron owing to the high on/off ratio(>10^(8))of Ag NDs TS device.Moreover,the high uniformity of the Ag NDs TS device helps improve the distribution of the output frequency and suppress the degradation of neural network recognition accuracy(<1%).Therefore,the developed oscillation neuron based on the Ag NDs TS device shows great potential for future neuromorphic computing applications.
基金
supported in part by China Key Research and Development Program(2016YFA0201800)
the National Natural Science Foundation of China(91964104,61974081)。
作者简介
Yujia Li,is currently a joint PhD.student of Faculty of Information Technology,Beijing University of Technology and Institute of Microelectronics,Tsinghua University from 2016.Her current research interests include design and optimization of resistive switching memory and selector devices as well as their applications in neuromorphic computing;Correspondence to:Jianshi Tang,jtang@tsinghua.edu.cn,(Senior Member,IEEE)received the B.S.degree in microelectronics and nanoelectronics from Tsinghua University,Beijing,China,in 2008,and the Ph.D.degree in electrical engineering from the University of California at Los Angeles,Los Angeles,CA,USA,in 2014.From 2015 to 2019,he worked at the IBM Thomas J.Watson Research Center,Yorktown Heights,NY,USA.He is currently an Assistant Professor with the Institute of Microelectronics,Tsinghua University.He has published over 100 journal articles and conference proceedings,and filed over 60 patents,20 of which have been granted.His current research interests include emerging memory and neuromorphic computing and carbon nanotube electronics.Prof.Tang has received many awards,including the National Young Thousand Talents Plan,the NT18 Best Young Scientist Award,the IEEE Best Lightning Talk,and the IBM Invention Achievement Awards;Bin Gao,(Senior Member,IEEE)received the B.S.degree in physics and the Ph.D.degree in microelectronics from Peking University,Beijing,China,in 2008 and 2013,respectively.He is currently an Associate Professor of microelectronics with Tsinghua University,Beijing.His current research interests include emerging memory devices and neuromorphic computing;Xinyi Li,received the Ph.D.degree in Microelectronics and Solid State Electronics from TianJin University,TianJin,China,in 2010.She is currently working with the Institute of Microelectronics,Tsinghua University.Her current research interests include neuromorphic devices and their application in neuromorphic computing;Yue Xi,(Student Member,IEEE)received the bachelor’s degree in microelectronics from Xi’an Jiaotong University,Xi’an,China,in 2017.He is currently pursuing the Ph.D.degree in microelectronics with Tsinghua University,Beijing,China.His current research interests include ana-log resistive switching memory devices and memristor-based neuromorphic computing;Wanrong Zhang,received the B.S.and M.S.degrees in microelectronics and solid-state electronics from Lanzhou University,Lanzhou,China,in 1987 and 1990,respectively,and the Ph.D.degree in microelectronics and solidstate electronics from Xi’an Jiaotong University,Xi’an,China,in 1996.He is currently a Professor and a Ph.D.Supervisor with the Faculty of Information Technology,Beijing University of Technology,Beijing,China.His current research interests include RF/microwave/millimeter-wave devices and circuits,mixed-signal circuits,cryogenic electronics,device-to-circuit interactions,noise and linearity,reliability physics,device-level simulation,and compact circuit modeling;He Qian,(Member,IEEE)received the Ph.D.degree in microelectronics from Xi’an Jiao-tong University,Xi’an,China,in 1990.From 1990 to 2006,he worked with the Institute of Microelectronics,Chinese Academy of Sciences(IMECAS),Beijing,China,where he became a Professor in 1996 and the Director in 2001.From 2006 to 2008,he worked for the Samsung Semiconductor China Research and Development Center(SSCR),Nanjing,China,as the Director.In 2009,he joined the Institute of Micro-electronics,Tsinghua University(IMTU),Beijing,as a Professor.His current research interests include resistive random access memory(RRAM),3-D NAND,and neuromorphic computing based on RRAM array;Correspondence to:Huaqiang Wu,wuhq@tsinghua.edu.cn,(Senior Member,IEEE)received the double B.S.degrees in material science and engineering and enterprise management from Tsinghua University,Beijing,China,in 2000,and the Ph.D.degree in electrical engineering from Cornell University,Ithaca,NY,USA,in 2005.From 2006 to 2008,he was a Senior Engineer with Spansion LLC,Sunnyvale,CA,USA.He joined the Institute of Microelectronics,Tsinghua University,in 2009,where he is currently a Professor and the Director of the Institute of Microelectronics.He also serves as the Deputy Director of the Beijing Innovation Center for Future Chip(ICFC).He has published more than 100 technical articles and owns more than 60 patents.His research interests include emerging memories and neuromorphic computing。
