摘要
采用ZnO:Ga2O3:T iO2为靶材,在玻璃衬底上射频磁控溅射制备了多晶Ga-T i共掺杂ZnO(GT Z O)薄膜,通过XRD、四探针、透射光谱测试研究了生长温度对薄膜结构和光电性能的影响。结果表明:所制备的薄膜具有c轴择优取向,光学带隙均大于本征ZnO的禁带宽度。当生长温度为620K时GT ZO薄膜的结晶质量最佳、电阻率最低、透射率最大、品质因数最高。
Ga-Ti codoped zinc oxide （GTZO） thin films were deposited by RF magnetron sputtering using a ZnO.Ga2Oa：TiO2 ceramic target at different growth temperatures. The structural characteristics of the films were investigated by XRD while the optoelectrical properties of the films were studied by four-point probe and optical transmission spectroscopy. The results show that all the films are c-axis preferred orientation perpendicular to the substrate,and that the optical energy gaps of the films are larger than the handgap of intrinsic ZnO. The film grown at the growth temperature of 620K exhibits the best crystallinity,the lowest resistivity,the maximum transmittance and the highest figure of merit.
出处
《光谱实验室》
CAS
2013年第5期2169-2173,共5页
Chinese Journal of Spectroscopy Laboratory
基金
湖北省自然科学基金资助项目(2011CDB418)
中南民族大学学术团队基金资助项目(XTZ09003)
关键词
磁控溅射
掺杂氧化锌
透明导电薄膜
Magnetron Sputtering
Doped Zinc Oxide
Transparent Conductive Thin Films
作者简介
张腾（1987-）,男,湖北省荆门市人,在读硕士,主要从事透明导电薄膜生长及其性能研究的工作.
