摘要
采用超声喷雾热解法在玻璃衬底上制作了不同浓度Al掺杂的ZnO∶Al薄膜(AZO)。采用扫描电镜(SEM)、X射线衍射(XRD)、光致发光(PL)、反射光谱(Res)、四探针测试仪等测试了不同Al掺杂浓度下AZO薄膜的表面形貌、晶体结构和光学、电学性能。SEM结果表明低掺杂浓度时AZO表面致密,随着Al浓度的增加薄膜表面孔洞增多,平整度降低。XRD结果表明当nZn/nAl物质的量比为100∶5时,AZO薄膜为c轴择优取向纤锌矿结构。PL谱结果表明不同浓度的Al掺杂AZO薄膜具有近带边紫外发射和深能级发射两个发射峰,且紫外发射峰随着Al3+浓度的增加先蓝移后红移。反射光谱表明所有样品在可见光区的反射率较低。。方阻测试结果表明当nZn/nAl为100∶5时,AZO薄膜具有良好的导电性。
The ZnO∶Al thin films with different Al doping concentrations were fabricated on glass substrates by ultrasonic spray pyrolysis method.The morphologies,crystal structures and optical properties were investigated by scanning electron microscopy（SEM）,X-ray diffraction（XRD）,photoluminescence（PL）,reflection spectra（Res）,and four-point probe,respectively.The SEM results indicate that the amount of hole on the surface increases and the surface soomthness decreases as Al concentration increasing.The XRD patterns demonstrate that when the molar ratio of Zn to Al is 100∶5,the AZO thin films have wurtzite structure with a preferential c-axis orientation.The PL spectra reveal that the NBE-peaks and DLE-peaks are observed in the AZO films with different Al doping concentration.The NBE-peaks show first blue-moved to a later red-shift as Al doping concentration increasing.Reflection spectra showed that all the samples had low reflectivity in visible region.Square resistance results indicate the AZO thin films have good electrical conductivity when the molar ration of Zn to Al is 100∶5.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第6期1376-1380,共5页
Journal of Synthetic Crystals
基金
天津市自然科学基金(09JCYBJC04400)资助项目
关键词
Al掺杂ZnO
透明导电薄膜
超声喷雾
Al doped ZnO
transparent conductive films
ultrasonic spray pyrolysis
作者简介
作者简介：严志宸（1988-），男，云南省人，本科。E—mail：2023983@sina．com.
通讯作者：张海明，博士，教授。E-mail：zhmtjwl@163.com.
