摘要
采用直流磁控溅射法在清洁玻璃基片上制备了掺钨氧化铟(IWO)透明导电氧化物薄膜。研究了氧分压及其退火处理对IWO薄膜光电性能的影响。实验发现薄膜的光电性能对氧分压非常敏感,退火郸理有助于改善IWO薄膜的电阻率。获得了最小电阻率为2.2×10-4Ω.cm,载流子迁移率为63.5 cm2/V.s,可见光范围平均透射率(含基片)为83.2%的IWO薄膜样品。
Transparent conductive,tungsten-doped indium oxide(IWO) films with the high carrier molbility were grown by magnetron sputtering on glass substrates,followed by in-situ annealing.The microstructures,optical and electrical properties of the IWO films were characterized with X-ray diffraction(XRD),atomic force microscopy(AFM),ultraviolet visible light(UV-Vis) spectro photometry and van der Pauw method.The influence of oxygen partial pressure and annealing on the electro-optical properties was investigated.It ...
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2008年第2期95-98,共4页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金委的项目资助(No.60671041)
上海市重点学科建设项目(No.B113)
关键词
IWO
高迁移率
退火处理
磁控溅射
IWO
High mobility
Annealing treatment
Magnetron sputtering
