摘要
激光切割半导体晶圆具有切槽窄、非接触式加工和加工速度快等特点,但仍然存在材料重凝、热影响区较大和易产生裂纹等问题。为了解决这些问题,分析了问题的成因,并分别从激光器、光学系统和加工介质3个方面详细介绍了一些新型半导体晶圆激光切割技术,阐述其基本原理,分析其优缺点及主要应用和研究领域,为进一步研究和工业化应用提供了技术参考。
Laser dicing semiconductor wafer has advantages of narrow kerf,non-contact processing and high dicing velocity etc.However,there still exist some problems,such as redeposition of melting material,large heat affected zone and cracking easily.In order to overcome these problems,the causes were analyzed and a series of newly-developed methods were introduced in detail from three aspects,i.e.,lasers,optical systems and processing mediums.Simultaneously,the basic principles were described.Furthermore,advantages,disadvantages and applications of laser dicing technique were analyzed,which provides valuable technical references for further research and industrial applications.
出处
《激光技术》
CAS
CSCD
北大核心
2012年第3期293-297,共5页
Laser Technology
基金
国家自然科学基金资助项目(50805027)
关键词
激光技术
激光切割
半导体晶圆
影响因素
激光器
laser technique
laser dicing
semiconductor wafer
influencing factors
lasers
作者简介
黄福民(1987-),男,硕士研究生,研究方向为激光加工技术;通讯联系人:谢小柱。E-mail:xiaozhuxie@gdut.edu.cn
