摘要
利用紫外皮秒激光器脉冲串模式对单晶硅材料进行切割测试研究,分析了不同子脉冲数量情况下单脉冲能量变化对热影响区大小、表面形貌效果、切缝宽度以及切割深度的影响。研究结果表明,脉冲串模式可以有效地降低热影响区,减少重熔层的产生。随着单脉冲能量的增加,脉冲串相比于单脉冲模式产生的热影区差值逐步增大,由增加脉冲串子脉冲数量而导致的热影响区减小效应愈加明显。当脉冲串中子脉冲数量为3或者5,脉冲能量为8μJ时产生的热影响区和表面形貌效果与单脉冲模式下脉冲能量为2μJ的效果基本一致,并且切割深度是单脉冲模式切割深度的2倍。
The UV picosecond laser burst mode was used to conduct cutting tests on single crystal silicon materials,and the effects of single pulse energy changes on the size of the heat-affected zone,surface topography,cutting width and cutting depth under different sub-pulses were analyzed.The results show that the burst mode can effectively reduce the heat affected zone and reduce the generation of remelted layers.With the increase of the single pulse energy,The difference between the heat affected zone produced by burst mode and that generated by single pulse mode increases gradually.And the decrease effect of the heat affected zone caused by the increase of the number of sub pulses in the burst mode becomes more obvious.When the number of neutron pulses in the burst mode is 3 or 5,and the pulse energy is 8μJ,the heat affected zone and surface morphology is basically the same as that of single pulse mode when the pulse energy is 2μJ,and the cutting depth is 2 times of that in the single pulse mode.
作者
汪于涛
袁山山
骆公序
李文兵
王丽
陈亮
沈佳骏
Wang Yutao;Yuan Shanshan;Luo Gongxu;Li Wenbing;Wang Li;Chen Liang;Shen Jiajun(Shanghai Keylab of Laser Beam Micro Processing,Shanghai Institute of Laser Technology,Shanghai 200233,China)
出处
《应用激光》
CSCD
北大核心
2020年第5期878-883,共6页
Applied Laser
基金
上海市科委项目(项目编号:19511130402)
关键词
脉冲串
单晶硅
热影响区
表面形貌
burst mode
single-crystal silicon
heat affected zone
surface morphology
作者简介
汪于涛(1992-),男,硕士,工程师,主要从事激光与材料相互作用的研究。E-mail:fandy459091542@163.com
