摘要
为研究碱金属Li掺杂ZnO薄膜的结构及光学性能，利用射频磁控溅射法（RF）在si基片上制备ZnO薄膜和Zn1-LixO薄膜，通过x射线衍射、原子力显微镜和光致发光对薄膜进行测试．研究结果表明：基片温度为450℃时，（002）峰成为薄膜的主要衍射峰；掺入碱金属Li后，薄膜表面颗粒依然均匀；Li掺杂量在5％～15％变化时，带间跃迁峰发生明显红移现象，各发光峰的强度呈抛物线形式变化．
Zn1-x LixO thin films of different doping proportion were grown on Si substrates with the magnetron sputtering method, and X-ray diffraction（XRD）, an atom force microscope （AFM） and photolurninescence （PL） were employed to study their structure, morphology and luminescence. The result indicates that the films have clear （002） peaks when the temperature is at 450℃ ,that Li-doping has not changed the surface of ZnO thin film significantly,and that the red shift of inter-band transition peak along with increasing proportion of Li-doping. The change in theamount has a strong influence on the intensitv of the peak.
出处
《西安工业大学学报》
CAS
2011年第4期349-351,359,共4页
Journal of Xi’an Technological University
作者简介
邱文旭（1982-），男，西安工业大学助教，主要研究方向为半导体薄膜材料．E-mail：qiuwenxu2006@yahoo．cn．
