摘要
采用直流反应磁控溅射法在玻璃基底上用Zn(99.99%)掺Al(1.5%)靶制备出高质量的Al掺杂的ZnO(AZO)薄膜。利用X射线光电子能谱仪和紫外-可见光分光光度计分别对制备的AZO薄膜进行成分、元素的价态分析和光学性质的研究。其实验结果表明,Zn元素以氧化态的形式存在,Al元素以氧化态和单质的形式存在,O元素主要以晶格氧和吸附氧的形式存在。AZO薄膜的光学参数受退火温度的影响较大。AZO薄膜在可见光区域内透射率的平均值为85%,并且随着退火温度的升高,AZO薄膜在可见光区域内的透射率稍微增大;薄膜的紫外吸收边向短波方向移动;薄膜的光学带隙从3.83 eV增大到3.88 eV;并且消光系数在紫外区域随着波长的增大而急剧下降。
Al doped ZnO(AZO) thin films with high quality were deposited on glass substrates by direct current(DC) reactive magnetron sputtering using a Zn target(99.99%) containing Al of 1.5%.The optical properties,compositional and element valence state of the AZO thin films was investigated by ultraviolet-visible light spectrophotometer and X-ray photoelectron spectroscopy(XPS),respectively.The results show that Zn atoms arein the oxidized state,Al atoms exist in the oxidized state or single atom,and O atoms mainly lie in the crystal lattice positions or are adsorbed.There is a strong influence of the annealing temperature on the optical properties of AZO thin films.The average value of the optical transmittity of the AZO thin films in the visible light region is 85% and it is slightly increased with rise of the annealing temperature.Simultaneously,with rise of the annealing temperature,the edge of ultraviolet absorption of the films shifts toward short wavelength,the optical band gap increases larger from 3.83 eV to 3.88 eV and the extinction coefficient sharply reduces with increasing the wavelength in the ultraviolet region.
出处
《微细加工技术》
2007年第5期39-43,47,共6页
Microfabrication Technology
基金
重庆市科技攻关项目资助(CSTC2005AA4006-A6)
重庆邮电大学青年教师科技基金项目资助(A2007-37)
关键词
AZO薄膜
XPS谱
光学性质
Al-doped ZnO(AZO) thin film
XPS spectra
optical property
作者简介
李丽(1979-),女,河南开封人,硕士,助教,现从事光电子薄膜材料方面的研究工作.
