期刊文献+

La_2O_3掺杂BST/Mg_2TiO_4微波复合陶瓷的制备和性能 被引量:2

Preparation and Properties of La_2O_3 Doped BST/Mg_2TiO_4 Microwave Composite Ceramics
原文传递
导出
摘要 用固相烧结法制备掺杂La_2O_3的Ba_(0.55)Sr_(0.45)TiO_3/Mg_2TiO_4微波复合陶瓷,研究了掺杂对其微观结构、微波(f=10 GHz)介电性能和调谐率的影响。结果表明:当掺杂La_2O_3量(质量分数)为1.2%时,La^(3+)进入BST晶格,且抑制了BST/Mg_2TiO_4中Ti从+4向+3价转化;La_2O_3的掺入比较明显地降低了介电常数和微波损耗,当掺杂La_2O_3量为1.2%时介电常数为52,损耗角为0.0011(f=10 CHz),调谐率13.6%(3 kV/mm)。 La2O3 doped Ba0.55Sr0.45TiO3/Mg2TiO4 microwave composite ceramics were prepared by traditional solid-state reaction, and the influence of La2O3 doping on microstructure, dielectric properties and tuning was investigated. The results show that La^3+ enters BST lattices when the mass fraction of La2O3 reach 1.2%, and La^3+ doped sample can prevent the change of the chemical valence of Ti in BST/Mg2TiO4 composite system from +4 to +3. Mg2TiO4 and La2O3 doping can reduce the dielectric constant and microwave loss separately. The 1.2% La2O3 doped sample has the best properties: dielectric constant 52; tanδ 0.0011 (10 GHz), and the tunability 13.4% (3 kV/mm).
出处 《材料研究学报》 EI CAS CSCD 北大核心 2011年第1期109-112,共4页 Chinese Journal of Materials Research
关键词 无机非金属材料 La2O3掺杂 固相烧结法 BST复合陶瓷 微波损耗 调谐率 inorganic non-metallic materials, La2O3 doped, solid-state reaction, BST composite ceramics, microwave loss, tunability
作者简介 本文联系人:胡作启,教授, Tel:(027)87540051, E-mail: hu_zuoqi@mail.hust.edu.cn
  • 相关文献

参考文献14

  • 1A.K.Tagantsev,V.O.Sherman,K.F.Astafiev,J.Venkatesh,N.Setter,Ferroe lectric Materials for Microwave Tunable Applications,J Electroceram,11,5(2003).
  • 2Jingji Zhang,Jiwei Zhai,Xi Yao,Dielectric tunable properties of low-loss Ba0.4Sr0.6Ti1-yMnyO3 ceramics,Scripta Materialia,61,764(2009).
  • 3Louise C.Sengupta,Somnath Sengupta,Breakthrough advances in low loss,tunable dielectric materials,Mat.Res.Innovat.,2,278(1999).
  • 4E.A.Nenashaeva,N.F.Kartenko,I.M.Gaidamaka,O.N.Trubisyna,S.S.Redozubov,Low loss microwave ferroelectric ceramics for high power tunable devices,Journal of the European Ceramic Society,30,395(2010).
  • 5Kyoung-Tae Kim,Chang-I1 Kim,Electrical and dielectric properties of Ce-doped Ba0.6Sr0.4TiO3 thin films,Surface & Coatings Technology,200,4708(2006).
  • 6Louise C.Sengupta,Electronically tunable dielectric composite thick films and methods of making same,Patent Application Publication,US Patent,0034667(2002).
  • 7R.H.Liang,X.L.Dong,Y.Chen,Fei Cao,Yong-Ling Wang,Effect of La2O3 doping on the tunable and dielectric properties of BST/MgO composite for microwave tunable application,Materials Chemistry and Physics,95,222(2006).
  • 8周洪庆,杨春霞,王宇光,宋昊,刘敏.La_2O_3掺杂对BST/MgO复合陶瓷显微结构和性能的影响[J].功能材料,2007,38(12):2093-2096. 被引量:6
  • 9胡作启,伍双杰,王成,王庆.X波段高介电常数谐振腔微扰法测量[J].华中科技大学学报:自然科学版,.
  • 10F.B.Li,X.Z.Li,M.F.Hou,Photocatalytic degradation of 2-mercaptoben zothiazole in aqueous La3+–TiO2 suspension for odor control,Applied Catalysis B:Environmental,48,185(2004).

二级参考文献6

  • 1Nenez S, Morell A, Maglione M. [J]. Key Eng Mater, 2002, 206-213:1513.
  • 2Li D,Subramanian M A. [J]. Mat Res Soc Syrup Proc, 2001, 658: 341.
  • 3Zimmermann F,Voigts M,Menesklou W.[J]. J Eur Ceram Soc, 2004, 24: 1729.
  • 4Wu L, Chen Y C, Huang C L.[J]. J Am Ceram Soc, 2000, 83:1713.
  • 5Liang X F, Wu W B, Meng Z Y. [J].Mat Sci Eng B, 2003, 99:366.
  • 6Tagantsev A K,Sherman V O, Astafiev K F. [J]. J Electroceram,2003, 11:5.

共引文献9

同被引文献21

  • 1汪小红,吕文中,刘坚,梁飞,周东祥.MgO对Ba_(0.6)Sr_(0.4)TiO_3铁电陶瓷材料结构及低频特性的影响[J].硅酸盐学报,2004,32(6):738-742. 被引量:12
  • 2范跃农,李蔓华,曹良足,胡鸿豪.MgO掺杂对Ba_(0.6)Sr_(0.4)TiO_3陶瓷性能的影响[J].电子元件与材料,2006,25(6):52-54. 被引量:1
  • 3管浩,黄新友.超细钛酸锶陶瓷粉体的湿化学制备技术[J].硅酸盐通报,2006,25(5):180-185. 被引量:4
  • 4ERIEH G E,NAGRAAMIT S,LIU Y,et al.Monolithic Ka-band phase shifter using voltage tunable BaSrTIO3 parallel plate capacitors[J].IEEE Microwave Guided Wave Lett,2000,10(1):10-15.
  • 5WEE F H,MALEK F.Design of microstrip patch array antenna using rectangular barium strontium titanate(BST)ceramic[J].ISWTA,2011:40-43.
  • 6HARKNESS S D,SINGH R K,MUELLER C,et al.Epitaxial BaxSr1–xTiO3/YBa2Cu3O7 bilayers for tunable microwave applications[J].Mater Sci Eng B:Solidg-state Mater Adv Technol,1996,41(3):379-383.
  • 7EZHIL V S,TSENG T Y.Progress in developments of(Ba,Sr)TiO3(BST)thin films for Gigabits era DRAMs[J].Mater Chem Phys,2000,65:227-248.
  • 8CHOU X J,ZHAI J W,YAO X,et al.Dielectric tunable properties o f low dielectric constant Ba0.5Sr0.5TiO3-Mg2TiO4 microwave composite ceramics[J].Appl Phys Lett,2007,91:122908.
  • 9CHEN Y,DONG X L,LIANG R H,et al.Dielectric properties of Ba0.6Sr0.4TiO3/Mg2SiO4/MgO composite ceramics[J].J Appl Phys,2005,98:064107.
  • 10ZHANG J J,ZHAI J W,YAO X,et al.Dielectric tunable properties of low loss Ba0.4Sr0.6Ti1-yMnyO3 ceramics[J].Scripta Materialia,2009,61:764-767.

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部