摘要
利用正切平方势把电子的Schrdinger方程化为了超几何方程,并用超几何函数严格求解了电子的本征值和本征函数利用量子力学中的密度矩阵算符理论导出了正切平方势阱中的线性与三阶非线性光学折射率的解析表达式计算了该系统中的线性与非线性光学折射率变化的大小,讨论了影响折射率变化因素文章以典型的GaAs/Al GaAs势阱为例作了数值计算,数值计算结果表明,势阱的形状和入射光强对光学折射率的变化有着重要的影响.
In the frame of quantum mechanics, the equation to describe the particle motion in Tan^2x quantum well is reduced to the hypergeometric equation. The eigenvalue and the eigefunction are obtained by solving the Schroedinger equation. Analytical expressions of linear and the third-order nonlinear optical refractive index changes are obtained in Tan^2x quantum well using the density matrix formalism taking into account the intrasuhhand relaxation. The linear and the third-order nonlinear refractive index changes are calculated. The results show that the refractive index changes depend on the shape of the well, the tunnel handwith and the optical intensity. Numerical results are presented for a typical GaAs/AlGaAs Tan^2x quantum well.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2007年第7期1253-1256,共4页
Acta Photonica Sinica
基金
the Natural Science Foundation of Guangdong Province under Grant No.06029431
关键词
非线性光学
正切平方势阱
折射率
密度矩阵近似
Nonlinear optics
Tan^2x quantum well
Refractive index
Density matrix approach
作者简介
Tel：0757-82308420 E-mail： tanpeng@fosu.edu.cn TAN Peng was born in Hunan, China, 1974. He obtained his Master＇s degree from Guangzhou University in 2001. His current research interests mainly include the optical nonlinearities in low-dimensional semiconductors structures.
