摘要
带电粒子在晶体沟道中的运动行为决定于粒子 晶体相互作用势。常用的粒子 晶体相互作用势有Lindhard势、Moliere和正弦平方势。当超相对论电子沿着晶体的低晶面指数方向入射时,电子和晶体之间的相互作用势可用反比相关的双曲余弦平方势描写。在量子力学框架内,利用这一相互作用势成功地将系统的Schrodinger方程化为超几何方程,从而简化了系统本征值和本征态问题的计算和讨论。考虑到质量的相对论效应和频率的Doppler效应,导出了实验室坐标系中电子的能级分布和辐射谱分布。并以电子的Si(110)面沟道辐射为例,选定一组与入射粒子有关的参数和一组与晶体有关的参数,计算了能量为E=0.5GeV的电子在低位能级之间的跃迁,导出了电子面沟道辐射能量ΔE=49.1MeV,得到了与实验符合的结果。
The behaviours of the charged particles moved in a crystal channel have been controlled by the interaction potential between a charged particles and the crystal.Usual interaction potential is Lindhard potential, Moliere potential and Sine-square potential. The interaction potential between a electron and a crystal may be described by ch^(-2)x potential if particle moved in the channel with the lower index. In the frame of quantum mechanics, Schrodinger equation has been deduced to the hypergeometric equation by this potential.The eigenvalue and the eigefunction problem of the system have been transformed to the eigenvalue and the eigefunction problem of the hypergeometric equation. The relativistic effect and Doppler effect are considered.The eigenvalue and the eigefunction have been calculated, the level distribution and the spectral distribution are induced. As example, the planar channeling radiation of a electron in channel of Si(110) is considered,if the parameters related to particle and the crystal have been chosen. If chosing the distance α=0.096 nm between the crystal surfase, the deep of the potential well V_0=27 eV,the electron energy E=5.0 GeV ,transition between nearby level has been calculated ,and the radiation energy ΔE=49.1 MeV has been obtained. It shows that conformity between the theory and the experiment is better.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2004年第5期473-476,共4页
Chinese Journal of Luminescence
基金
广东省科技计划资助项目(2003A1040312)
