摘要
在研究大量实验曲线的基础上,指出势阱所有能级均有一定的宽度,电子或空穴在各能级中出现的概率符合正态分布,从理论上分析了I类超晶格和双势垒单势阱的发光光谱与吸收光谱·解释了GaAs/Ga1-xAlxAs多量子阱和超晶格吸收光谱吸收边及量子阱变窄时各吸收峰的“蓝移现象”及GaAs/Ga1-xAlxAs双势垒单量子阱样品的电流—电压特性曲线及电导—电压特性曲线的特征和出现的“负阻效应”·
Based on the study of a great deal of the experiment curves,the current study points out that all the energy levels in potential well have a certain width and the probability of the appearance of the electronics or holes in each energy level matches the normal distribution, and analyses the luminescent spectrum and absorption spectrum of Superlattice Ⅰ and single potential well with double barrier theoretically, explains the absorption sides of the absorption spectrum in both the GaAs/Gal-~AI^As multi- quantum wells and Superlattice and the＂blue move＂ of each absorption peaks when the quantum well narrowing down. Furthermore, discusses the electric characteristic of the GaAs/Ga1-x AlxAs single potential current- voltage and the conductance- voltage well sample with double barrier and the ＂negative resistance effect＂.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2006年第12期1930-1933,共4页
Acta Photonica Sinica
关键词
超晶格
单势阱
吸收光谱
蓝移
隧道效应
Ssuperlattice
Single potential well
AbsOrption spectrum
Blue move
Tunneling effect
作者简介
Tel：029—88272259,Email：lxy881188@126．com .LIu Xiaoyan was bore in 1964. She graduated from the Colloge of Physics and Information Technology of Shaanxi Normal University in 1986, and received her master＇s degree in 2000. She has been working at the teaching and the research of the quantum mechanics since 2001.
