摘要
在研究光电耦合器电离辐射损伤机理基础上,分别建立光电耦合器电离辐射损伤电流传输比(CTR)表征模型和1/f噪声表征模型.结果表明CTR退化和噪声增加都归因于辐射后光敏三极管集电结和发射结处SiO2/Si界面缺陷增多.根据CTR退化和噪声变化分别与辐射剂量的关系,建立起噪声变化与CTR退化之间的关系,辐照实验对表征模型正确性进行了验证.运用噪声变化与辐射剂量的关系,通过低剂量辐照实验可以预测高剂量辐射后光电耦合器退化程度,故可用于评价光电耦合器抗辐射能力.
Based on the mechanism of ionization radiation damage in optoelectronic coupled devices（OCDs）,the characteristic models of current transmitting rate（CTR） and 1 /f noise are established.The results show that CTR degradation and noise increase are due to the increase of SiO2 /Si interface defects at the collector junction and emit junction in phototransistor.The relationship between CTR degradation and noise change is established by the radiation dose.The correctnesses of characteristic models are validated in experiment.By the relationship between noise change and radiation dose,the highdose radiation degradation can be predicted through the low-dose irradiation experiment.So noise can be used to evaluate the radiation tolerance of OCDs.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第4期609-615,共7页
Acta Physica Sinica
作者简介
E-mail：linliyan568@yahoo．cn
