摘要
等离子体浸没离子注入(PIII)是用于材料表面改性的一种较新的、廉价的、非视线的技术。靶体被浸没在等离子体中,等离子体中的离子在靶体负脉冲偏压的作用下注入靶体而实现材料的表面改性。为了描述等离子体浸没离子注入过程,我们引用了一维粒子模型(PIC)对其进行了数值模拟,该模型通过求解空间电势的Poisson方程,电子的Bolzmann分布以及离子在网格中受力运动的Newton运动方程来完成。本文重点研究了一个初始离子阵鞘层内电势、离子浓度、离子注入靶体的速度和动能以及离子流密度的时空演化规律。
Plasma immersion ion implantation(PIII) has proven to be a low cost and high efficient surface modification technique to treat complex shaped objects.The target is immersed in a plasma,and the ions,extracted from the plasma directly,are accelecrated and then implanted into the surface by applied negative high-voltage pulses to the target.In order to describe the implantation dynamics,the plasma sheath has been studied by the particle-in-cell(PIC) simulation through the solution of the Poisson's equation,the Bolzmann's approximation for the electrons and the Newton's equation of the movement of ions in the grid.The temporal evolution in matrix sheath including the potential,ion density,ion velocity,kinetic energy and ion current density is paid more attention.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2005年第2期115-119,共5页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金(10345003和50373007)资助
