摘要
为了实现与现有集成电路工艺兼容的全硅基发光器件,提出了一种新型硅基垂直腔面光发射器件结构。它采用等离子体增强化学气相淀积(PECVD)方法制备的非晶硅(或非晶氮化硅)/二氧化硅交替生长的多层薄膜结构为分布式Bragg反射器(DBR),以夹在上下两个Bragg反射器之间的非晶碳化硅薄膜为中间发光层。通过设计与模拟,分析了DBR中薄膜生长顺序与层数对器件性能的影响。最后研制出光致红光发射器件和电致蓝绿光发射器件,并给出了它们的光致和电致发光谱。结果显示了在光致和电致激发下非晶碳化硅的发光和DBR对光谱的限制增强作用。
A Si-based vertical cavity surface light emitter was developed that is compatible with existing IC processes. The device's distributed Bragg reflectors (DBR) are composed of periodically stacked plasma enhanced chemical vapor deposition a-SiO2:H/a-Si:H layers with the active layer filled with a-SiCx:H. The number and order of the periodically stacked multilayers was determined through simulations. A photoluminescent red light emitter and an electroluminescent blue-green light emitter were fabricated. The photoluminescent and electroluminescent spectra resulted from the a-SiCx:H luminescence and Bragg reflector's effect on the spectra.
出处
《清华大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2005年第4期553-556,共4页
Journal of Tsinghua University(Science and Technology)
基金
国家自然科学基金资助项目(60176031)
关键词
微电子学
垂直腔面光发射器件
Bragg反射器
PECVD
microelectronics
vertical cavity surface light emitter
distributed Bragg reflectors
plasma enhanced chemical vapor deposition
