摘要
从光学传输矩阵方法出发 ,研究了分布布拉格反射器 (DBR)生长顺序的不同对半导体平面微腔中电场振幅极大值位置及整个微腔选频特性的影响 ;同时指出了 DBR对于λ0 / 2和λ0
Using the transfer matrix scheme,the effects of DBR's growth sequence have been studied on the properties of semiconductor planar microcavity,in particular on the spatial position of the amplifier maximum of electric field and the mode selection properties of the photon field.The best growing mode of DBR for λ 0/2 and λ 0 cavities,is also given.
基金
国家自然科学基金资助项目 !(批准号 :197740 45 )&&
