摘要
利用等离子体对硅衬底上热生长SiO2薄膜进行表面处理,提高了二氧化硅薄膜驻极体电荷的储存稳定性。不同种类的等离子体处理,效果明显不同。同种等离子体处理的时间不同,对电荷储存性能的改善也不同。氩等离子体处理具有最佳效果。经15min700V电压起弧的氩等离子体处理,热生长二氧化硅薄膜驻极体的充电电荷在150℃下有很好的存储稳定性,达到化学表面修正的同等效果。实验结果表明,氩等离子体处理改变了SiO2薄膜表面的亲水性,有效地阻止了因水汽在表面附着引起表面电导增大造成的驻极化电荷流失。另外,等离子体轰击在薄膜的近表面引入了电荷陷阱,使俘获的驻极化电荷能较稳定地保存。
The stability of charge storage of the SiO_2 film electret is improved by the plasma surface treatment of the thermal grown SiO_2 film on the Si substrate. The effects are obviously different when the different kinds of plasma are used. The effects are also different when the treatment times are different with the same kind of plasma. The best effect is obtained with Ar^+ plasma. After Ar^+ plasma treatment with the arcing at 700 V and 15 min for the SiO_2 film electret, its charge storage has the same stability in 150 ℃ as one after the chemical surface modification.The experimental results show that Ar^+ plasma treatment changes the hydrophilicity of the surface of SiO_2 film and prevent the electret charge from leaking, which is owning to the increase of the surface conductance by the vapor adherence on the surface. In addition,the plasma bombardment induces the charge traps into the near-surface,which make the trapped charge stored stably.
出处
《微细加工技术》
2004年第4期45-49,73,共6页
Microfabrication Technology
基金
江苏省高校自然科学研究计划资助项目(02KJB140003)
