摘要
利用等温表面电位衰减及热刺激放电 (thermallystimulateddischarge ,TSD)方法探讨了恒栅压电晕充电经常压化学气相沉积 (APCVD)的Si基Si3N4 和热生长SiO2 双层薄膜驻极体电荷的存储特性 .结果表明 :在常温环境中 ,30 0℃高温下 ,以及 95 %相对湿度时的 6 0℃条件下 ,所有试样表现出极好的电荷储存稳定性 .对于负电晕充电试样 ,其电荷输运受慢再捕获效应 (slowretrappingeffect)控制 ;用热离子发射模型来描述了正电晕充电Si3N4 /SiO2 驻极体的正电荷输运特性 .
The characteristics of charge storage in APCVD Si3N4/thermal-grown Sig double layers electret films, charged by coroma were investigated by measurements of isothermal surface potential decay and thermally stimulated discharge (TSD). The results show that all of the samples have high charge stability at room temperature, at 300 and 60 degreesC under 95% of the relative humidity. The transport of the trapped charges due to external excitation for the negatively charged samples is basically controlled by the slow retrapping effect. However, the transport of detrapped positive charges due to external excitation can be described by a model of thermal ion emission.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第2期293-298,共6页
Acta Physica Sinica
基金
国家自然科学基金! (批准号 :5 96 82 0 0 3)
中国科学院上海冶金研究所离子束开放实验室资助的课题
