期刊文献+

基于LDO限流技术的辐射闩锁防护技术 被引量:4

A technology for protection from latch-up based on current rejection by LDO
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摘要 讨论了CMOS器件受辐射感生的闩锁与电气感生的闩锁的异同点,研究并提出了一种基于限流型低压降线性调整器的闩锁防护方法,给出了卫星用线性调整器电路的地面总剂量摸底试验数据及空间飞行试验验证结果和解决星载计算机的闩锁防护与恢复问题的有效方法. This paper discusses the similarities and differences between the latch-up induced by electrics and the latch-up induced by radiation for CMOS IC's. A technical scheme for Latch-up protection based on current rejection by a low-dropout linear voltage regulator (LDO) is developed, with the onboard experimental result and the experimental data of TDO on ground of the LDO circuit used on the satellite given. Finally, the problem of protection and recovery from latch-up on the onboard-computer has been solved.
出处 《西安电子科技大学学报》 EI CAS CSCD 北大核心 2004年第4期565-568,共4页 Journal of Xidian University
基金 国家部委预研基金资助项目(413110502)
关键词 星载计算机 空间辐射 闩锁防护 线性调整器 onboard computer space radiation protection from latch-up linear voltage regulator
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参考文献10

  • 1郭红霞,张义门,陈雨生,周辉,肖伟坚,龚仁喜,贺朝会,龚建成.MOSFET单粒子翻转效应的二维数值模拟[J].西安电子科技大学学报,2002,29(4):461-464. 被引量:4
  • 2Ochoa A, Dawes W. Latch-up Control in CMOS Integrated Circuits[J]. IEEE N S, 1979, 26(6): 5065-5067.
  • 3Hu G J. A Better Understanding of CMOS Latch-up[J]. IEEE E D, 1984, 31(1): 62-67.
  • 4Johnston A H. The Influence of VLSI Technology Evolution on Radiation-Induced Latchup in Space System[J]. IEEE N S, 1996, 43(2): 505-506.
  • 5Bruguier G, Palau J M. Single Particle-induced Latchup[J]. IEEE N S, 1996, 43(2): 523-531.
  • 6Johnston A H, Hughlock B W. Latchup in CMOS from Single Particles[J]. IEEE N S, 1990, 37(6): 1886-1892.
  • 7尚也淳,张义门,张玉明.SiC抗辐照特性的分析[J].西安电子科技大学学报,1999,26(6):807-810. 被引量:16
  • 8Chau S N, Tai A T. The Design of a Fault-Tolerant COTS-Based BUS Architecture for Space Applications[R]. NASA Research Report, 1998.
  • 9胡永贵,蒲大勇,崔伟.一种低压差+5V三端电源的研制[J].微电子学,2002,32(6):462-464. 被引量:3
  • 10Maxim. 5V/3.3V or Adjustable, Low-Dropout, Low IQ, 200mA Linear Regulators[DB/OL]. http://www.maxim-ic.com, 2003-04-01.

二级参考文献11

  • 1[1]Kay M. Design and analysis of an LDO voltage regu lator with a PMOS power device [Z]. Preliminary Paper. Texas Instruments Inc , Dallas.
  • 2[2]Rincon-Mora G A, Allen P E. A low voltage, low quiescent, low drop-out regulator [J]. IEEE J Sol Sta Circ, 1998; 33 (1): 36-44.
  • 3[3]Rincon-Mora G A, Allen P E. Optimized frequency shaping circuit topologies for LDO's [J]. IEEE Trans Circ Syst- I : Analog and Digital Signal Processing, 1998; 45(6): 703-708.
  • 4[4][4]Jiang Y-M, Edward K F L. Design of low-voltagebandgap reference using transimpedance amplifier[J]. IEEE Trans Circ Syst-Ⅱ: Analog and Digital Signal Processing, 2000; 47 (6): 552-559.
  • 5[5]Rogers E. Stability analysis of low-dropout linear reg ulators with a PMOS pass element [Z]. Application Specialist. Texas Instruments Inc.
  • 6[6]Lee B S. Technical review of low dropout voltage regulator operation and performance [Z]. Application Report, literature number SLVA072. Texas Instruments Inc.
  • 7[7]King B M. Advantages of using PMOS-type lowdropout linear regulators in battery applications [Z]. Applicatons Specialist. Texas Instruments Inc.
  • 8李华,试验与研究,1997年,20卷,2期,7页
  • 9李华,牛胜利,李原春,李国政.中子引起的单粒子反转截面的Monte Carlo模拟计算[J].计算物理,1997,14(3):333-339. 被引量:7
  • 10尚也淳,张义门,张玉明.SiC抗辐照特性的分析[J].西安电子科技大学学报,1999,26(6):807-810. 被引量:16

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