摘要
A thin BN interphase is applied on BNNTs surface to tailor the interfacial bonding between BNNTs and SiC matrix in hierarchical SiCf/SiC composites. The thickness of BN interphase ranging from 10 to 70 nm can be optimized by chemical vapor deposition after BNNTs are in situ grown on SiC fiber surface. Without BN interphase, the fracture toughness of hierarchical Si Cf/Si C composites can be impaired by 13.6% due to strong interfacial bonding. As long as BN interphase with 30–45 nm thickness is applied, the interfacial bonding can be optimized and fracture toughness of hierarchical composites can be improved by 27.3%. It implies that tailoring BNNTs/matrix interface by depositing a layer of BN interphase is in favor of activating energy dissipation mechanisms at nanoscale induced by BNNTs.
A thin BN interphase is applied on BNNTs surface to tailor the interfacial bonding between BNNTs and SiC matrix in hierarchical SiCf/SiC composites. The thickness of BN interphase ranging from 10 to 70 nm can be optimized by chemical vapor deposition after BNNTs are in situ grown on SiC fiber surface. Without BN interphase, the fracture toughness of hierarchical Si Cf/Si C composites can be impaired by 13.6% due to strong interfacial bonding. As long as BN interphase with 30–45 nm thickness is applied, the interfacial bonding can be optimized and fracture toughness of hierarchical composites can be improved by 27.3%. It implies that tailoring BNNTs/matrix interface by depositing a layer of BN interphase is in favor of activating energy dissipation mechanisms at nanoscale induced by BNNTs.
基金
supported by National Natural Science Foundation of China (Grant Nos. 51772310 and 51502323)
the National Key Research and Development Program of China (Grant No. 2017YFB0703200)
the research grant from Science and Technology Commission of Shanghai Municipality (Grant No. 16DZ2260600)
Science Foundation for Youth Scholar of State Key Laboratory of High Performance Ceramics (Grant No. SKL201601)
Chinese Academy of Science (Grant No. QYZDY-SSW-JSC031).
作者简介
Corresponding author:YANG,J.Yang,E-mail:Jinshan,jyang@mail.sic.ac.cn;Corresponding author:Shaoming DONG,E-mail:S.Dong,smdong@mail.sic.ac.cn
