A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VD...A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.展开更多
A novel trench insulated gate bipolar transistor(IGBT) with improved dynamic characteristics is proposed and investigated. The poly gate and poly emitter of the proposed IGBT are arranged alternately along the trench....A novel trench insulated gate bipolar transistor(IGBT) with improved dynamic characteristics is proposed and investigated. The poly gate and poly emitter of the proposed IGBT are arranged alternately along the trench. A self-biased p-MOSFET is formed on the emitter side. Owing to this unique three-dimensional(3D) trench architecture, both the turnoff characteristic and the turn-on characteristic can be greatly improved. At the turn-off moment, the maximum electric field and impact ionization rate of the proposed IGBT decrease and the dynamic avalanche(DA) is suppressed. Comparing with the carrier-stored trench gate bipolar transistor(CSTBT), the turn-off loss(E_(off)) of the proposed IGBT also decreases by 31% at the same ON-state voltage. At the turn-on moment, the built-in p-MOSFET reduces the reverse displacement current(I_(G_dis)), which is conducive to lowing dI_(C)/d_(t). As a result, compared with the CSTBT with the same turn-on loss(E_(on)), at I_(C) = 20 A/cm^(2), the proposed IGBT decreases by 35% of collector surge current(I_(surge)) and 52% of dI_(C)/d_(t).展开更多
基金Project supported in part by the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017)111 Project(Grant No.B12026)。
文摘A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.
基金Project supported by the Natural Science Foundation of Hunan Province, China (Grant No. 2023JJ40161)the Natural Science Foundation of Changsha, China (Grant No. kq2202163)+1 种基金the National Natural Science Foundation of China (Grant No. U21A20499)the Fundamental Research Funds for the Central Universities, China (Grant No. 531118010735)。
文摘A novel trench insulated gate bipolar transistor(IGBT) with improved dynamic characteristics is proposed and investigated. The poly gate and poly emitter of the proposed IGBT are arranged alternately along the trench. A self-biased p-MOSFET is formed on the emitter side. Owing to this unique three-dimensional(3D) trench architecture, both the turnoff characteristic and the turn-on characteristic can be greatly improved. At the turn-off moment, the maximum electric field and impact ionization rate of the proposed IGBT decrease and the dynamic avalanche(DA) is suppressed. Comparing with the carrier-stored trench gate bipolar transistor(CSTBT), the turn-off loss(E_(off)) of the proposed IGBT also decreases by 31% at the same ON-state voltage. At the turn-on moment, the built-in p-MOSFET reduces the reverse displacement current(I_(G_dis)), which is conducive to lowing dI_(C)/d_(t). As a result, compared with the CSTBT with the same turn-on loss(E_(on)), at I_(C) = 20 A/cm^(2), the proposed IGBT decreases by 35% of collector surge current(I_(surge)) and 52% of dI_(C)/d_(t).
