摘要
针对绝缘栅双极晶体管(IGBT)模块散热中功率密度高且散热负荷随工况变化的问题,基于制冷剂对流散热和蒸发潜热的微通道沸腾相变散热技术可对IGBT芯片进行有效散热,建立了三维、伪瞬态算法稳态和流体体积(VOF)相变的综合数学模型。研究了R1233zd、R1234ze、R134a三种相变制冷剂在单片IGBT微通道沸腾相变散热器中的散热性能;在单片的基础上进行了多片IGBT串联、并联、串并联三种不同流道设计的微通道沸腾相变散热器性能的数值模拟研究。研究结果表明,R134a在6 L/min流速工况下,较其他两种相变制冷剂散热性能更优;串联流道比并联和串并联流道芯片温升低34.5%,其整体温升低于60℃。
Aiming at the problems of high power density and varying heat dissipation load with operating conditions in the heat dissipation of insulated gate bipolar transistor(IGBT)modules,micro channel boiling phase change heat dissipation technology based on refrigerant convection and latent heat of evaporation can effectively dissipate heat for IGBT chips,and a comprehensive mathematical model of three-dimensional,pseudo-transient method of steady state and volume of fluid(VOF)phase change was established.The heat dissipation performances of three phase-change refrigerants R1233zd,R1234ze and R134a in the single-chip IGBT with micro channel boiling phase-change heat sink were investigated.Based on the single-chip analysis,numerical simulations were conducted for the heat dissipation performance of micro channel boiling phase-change heat sink in multi-chip IGBT with three different flow path designs:series,parallel and series-parallel.The results indicate that R134a exhibits superior heat dissipation performance compared with the other two phase-change refrigerants under a flow rate of 6 L/min;the temperature rise of the chip in the series flow path is 34.5%lower than that in the parallel and series-parallel flow paths,and the overall temperature rise is lower than 60℃.
作者
潘子升
周俊屹
余时帆
胡桂林
Pan Zisheng;Zhou Junyi;Yu Shifan;Hu Guilin(Hangzhou Silan Microelectronics Co.,Ltd.,Hangzhou 310012,China;School of Mechanical and Energy Engineering,Zhejiang University of Science and Technology,Hangzhou 310023,China;Zhejiang Institute of Quality Science,Hangzhou 310018,China)
出处
《半导体技术》
2025年第5期506-513,531,共9页
Semiconductor Technology
作者简介
潘子升(1973-),男,山东潍坊人,硕士,高级工程师,主要从事集成电路设计及应用研究;通信作者:胡桂林(1975-),男,江西南昌人,博士,教授,主要从事氢能和电子器件热管理等研究。
