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针对IGBT固态断路器的在线监测系统设计

Online Monitoring System Design for IGBT Based Solid-State Circuit Breakers
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摘要 针对固态断路器(SSCB)和功率半导体器件在长期工作下的系统级在线监测手段匮乏的问题,设计了绝缘栅双极晶体管(IGBT)固态断路器的在线监测系统,采用微控制器单元、测量回路以及模拟实验回路相互配合,实现了对IGBT老化状态的监测与数据提取。实验结果表明,该系统能够对400 V直流母线电压下的114 A故障电流进行连续重复关断,而测量回路则能够实时监测待测器件(DUT)的导通压降V_(CE,on),可监测到IGBT在循环过程中出现的导通压降升高这一老化特征,所有待测器件的V_(CE,on)均在上百次循环过程中升高了10%以上。通过扫描电子显微镜(SEM)分析可知,其键合线处的缝隙宽度增大了142.44%,实际验证了IGBT的键合线老化机理。 To address the lack of system-level online monitoring methods of solid-state circuit breakers(SSCBs)and power semiconductor devices under long-term operation,an online monitoring system for insulated gate bipolar transistor(IGBT)based SSCBs was designed to achieve aging state monitoring and data extraction of IGBTs by using a microcontroller unit,a measurement circuit and a simulation experimental circuit in conjunction with each other.Experimental results show that the system can turn off the 114 A fault current at 400 V DC bus voltage in continuous and repeated mode,and the measurement circuit can monitor the on-state voltage drop V_(CE,on) of the device under test(DUT)in real time and can monitor the aging feature of increased on-state voltage drop that occurs in the IGBT during cycling,and the V_(CE,on) of all the DUTs increases at least 10%during hundreds of cycles.The scanning electron microscope(SEM)analysis shows that the gap width at the bonding wire has increased by 14244%,providing practical validation of the aging mechanism of IGBT bonding wires.
作者 周进飞 郭鹏 高阿骥 Zhou Jinfei;Guo Peng;Gao Aji(Nantong Pover Supply Branch,State Grid Jiangsu Electric Pover Co,Ltd.,Nantong 226000,China)
出处 《半导体技术》 北大核心 2024年第2期178-182,共5页 Semiconductor Technology
基金 国网江苏省电力有限公司科技项目(J2022010)。
关键词 固态断路器(SSCB) 绝缘栅双极晶体管(IGBT) 导通压降测量 在线监测 键合线老化 扫描电子显微镜(SEM)分析 solid-state circuit breaker(SSCB) insulated gate bipolar transistor(IGBT) on-state voltage drop measurement online monitoring bonding wire aging scanning electron microscope(SEM)analysis
作者简介 周进飞(1989-),男,江苏南通人,工程师,主要研究方向为配电运检。
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