This paper describes what is thought to be the first generation of a continuous wave deep ultraviolet laser at 275 nm by efficient frequency doubling of a blue-diode-pumped Pr:YLF laser at 550 nm.By employing a novel ...This paper describes what is thought to be the first generation of a continuous wave deep ultraviolet laser at 275 nm by efficient frequency doubling of a blue-diode-pumped Pr:YLF laser at 550 nm.By employing a novel fast-axis collimated blue semiconductor laser as the pump source,combined with a folded cavity and innovation coating technology,and utilizing a Brewster-cut BBO crystal for intracavity frequency doubling,TEM00 mode deep UV laser radiation at 275 nm with an output power of 351 mW is obtained.This marks the first report of achieving 275 nm laser generation based on Pr:LiYF4 to date.展开更多
There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresse...There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.展开更多
文摘This paper describes what is thought to be the first generation of a continuous wave deep ultraviolet laser at 275 nm by efficient frequency doubling of a blue-diode-pumped Pr:YLF laser at 550 nm.By employing a novel fast-axis collimated blue semiconductor laser as the pump source,combined with a folded cavity and innovation coating technology,and utilizing a Brewster-cut BBO crystal for intracavity frequency doubling,TEM00 mode deep UV laser radiation at 275 nm with an output power of 351 mW is obtained.This marks the first report of achieving 275 nm laser generation based on Pr:LiYF4 to date.
文摘There is nonradiative recombination in waveguide region owing to severe carrier leakage,which in turn reduces output power and wall-plug efficiency.In this paper,we designed a novel epitaxial structure,which suppresses carrier leakage by inserting n-Ga_(0.55)In_(0.45)P and p-GaAs_(0.6)P_(0.4) between barriers and waveguide layers,respectively,to modulate the energy band structure and to increase the height of barrier.The results show that the leakage current density reduces by 87.71%,compared to traditional structure.The nonradiative recombination current density of novel structure reduces to 37.411 A/cm^(2),and the output power reaches 12.80 W with wall-plug efficiency of 78.24%at an injection current density 5 A/cm^(2) at room temperature.In addition,the temperature drift coefficient of center wavelength is 0.206 nm/℃at the temperature range from 5℃to 65℃,and the slope of fitted straight line of threshold current with temperature variation is 0.00113.The novel epitaxial structure provides a theoretical basis for achieving high-power laser diode.
