A new high order CMOS temperature compensated current reference is proposed in this paper, which is accomplished by two first order temperature compensation current references. The novel circuit exploits the temperatu...A new high order CMOS temperature compensated current reference is proposed in this paper, which is accomplished by two first order temperature compensation current references. The novel circuit exploits the temperature characteristics of integrated-circuit resistors and gate-source voltage of MOS transistors working in weak inversion. The proposed circuit, designed with a 0.6 Izm standard CMOS technology, gives a good temperature coefficient of 31ppm/℃ [-50-100℃] at a 1.8V supply, and also achieves line regulation of 0.01%/V and-120dB PSR at 1 MHz. Comparing with other presented work, the proposed circuit shows better temperature coefficient and Line regulation.展开更多
A lowtemperature coefficient（ TC） bandgap reference（ BGR） with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of ...A lowtemperature coefficient（ TC） bandgap reference（ BGR） with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of BGR achieves fine adjustment step towards the reference voltage,while keeping optimal TC by utilizing large resistance to help layout match. The high-order curvature compensation realized by poly and p-diffusion resistors is introduced into the design to guarantee the temperature characteristic. Implemented in 180 nm technology,the proposed BGR has been simulated to have a power supply rejection ratio（ PSRR） of 91 dB@100 Hz. The calibration technique covers output voltage scope of 0. 49 V-0. 56 Vwith TC of 9. 45 × 10^（-6）/℃-9. 56 × 10^（-6）/℃ over the temperature range of-40 ℃-120 ℃. The designed BGR provides a reference voltage of 500 mV,with measured TC of 10. 1 × 10^（-6）/℃.展开更多
A novel curvature-compensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temperature compensations generated from the nonlinearity of the finite current gain β of vertical pnp...A novel curvature-compensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temperature compensations generated from the nonlinearity of the finite current gain β of vertical pnp bipolar transistor. The proposed circuit, designed in a standard 0.18 μm CMOS process, achieves a good temperature coefficient of 2.44 ppm/℃ with temperature range from --40℃ to 85 ℃, and about 4 mV supply voltage variation in the range from 1.4 V to 2.4 V. With a 1.8 V supply voltage, the power supply rejection ratio is -56dB at 10MHz.展开更多
The effect of synthesis temperature and reaction time on the visible-light photocatalytic activity of hierarchical network-like SnIn4S8 microspheres was investigated by the low-temperature co-precipitation strategy. T...The effect of synthesis temperature and reaction time on the visible-light photocatalytic activity of hierarchical network-like SnIn4S8 microspheres was investigated by the low-temperature co-precipitation strategy. The preparation temperature and reaction time have great influence on the photocatalytic activity of SnIn4S8, and the optimal preparation temperature and reaction time are 70℃ and 3 h, respectively.The SnIn4S8 shows good reusability and high stability with no observable decrease of photocatalytic activity in five consecutive cycles.展开更多
This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature ...This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature as well as reduce the influence of resistance-temperature dependency.Considering the degraded circuit performance caused by the process deviation,the trimmable module of the temperature coefficient(TC)is introduced to improve the circuit stability.The circuit has the advantages of simple structure,high linear stability,high TC accuracy,and trimmable TC.It consumes an area of 0.09 mm^(2)when fabricated by using the 0.25-μm complementary metal-oxide-semiconductor(CMOS)process.The proposed circuit achieves the simulated power supply rejection(PSR)of about-78.7 dB@1 kHz,the measured TC of~4.7 ppm/℃over a wide temperature range from-55℃to 125℃with the 2.5-V single-supply voltage,and the tested line regulation of 0.10 mV/V.Such a high-performance bandgap reference circuit can be widely applied in high-precision and high-reliability electronic systems.展开更多
A new method to calculate the motor temperature rising in electric vehicle （EV） is proposed based on the stator resistance identification. The measure theory of the motor temperature rising with the stator resistanc...A new method to calculate the motor temperature rising in electric vehicle （EV） is proposed based on the stator resistance identification. The measure theory of the motor temperature rising with the stator resistance is discussed at first. An enhanced magnetism motor dynamic math model is built which is the research object. Then the resistance identification system model is built on the mutual model reference adaptive,system （MRAS） theory. The simulation diagram of the mutual MRAS model is constructed and the resistance identification performance is studied in different motor states. Simulation results indicate that the stator resistance identification model with the mutual MRAS is effective. At the same time, the identification of motor temperature rising is possible with the identification of the stator resistance.展开更多
电源管理芯片在超过可承受温度范围工作时会对自身造成不同程度的损坏,过温保护电路对提高该类芯片的可靠性和鲁棒性具有重要作用。文中设计了一种具有温度过高关断和温度过低提醒等双重功能的高精度过温保护电路。利用正、负温度系数...电源管理芯片在超过可承受温度范围工作时会对自身造成不同程度的损坏,过温保护电路对提高该类芯片的可靠性和鲁棒性具有重要作用。文中设计了一种具有温度过高关断和温度过低提醒等双重功能的高精度过温保护电路。利用正、负温度系数电压对芯片温度进行实时检测,并与带隙基准电路输出端的不同基准电压分别进行比较得到4个逻辑翻转点,进而通过高精度比较器电路和迟滞逻辑电路处理后,输出迟滞逻辑信号来控制芯片的工作状态或进行温度过低提醒。基于0.18μm BCD(Bipolar-Complementary Metal Oxied Semiconductor-Double diffused Metal Oxide Semiconductor)工艺设计并完成了相关仿真验证,仿真结果表明,在电源电压范围为3.0~5.5 V时,该电路输出端的迟滞逻辑翻转信号对应的温度阈值最大偏移量在0.3℃以内,具备较高的精度,可广泛集成于各种需要过温保护功能的电源管理芯片。展开更多
文摘A new high order CMOS temperature compensated current reference is proposed in this paper, which is accomplished by two first order temperature compensation current references. The novel circuit exploits the temperature characteristics of integrated-circuit resistors and gate-source voltage of MOS transistors working in weak inversion. The proposed circuit, designed with a 0.6 Izm standard CMOS technology, gives a good temperature coefficient of 31ppm/℃ [-50-100℃] at a 1.8V supply, and also achieves line regulation of 0.01%/V and-120dB PSR at 1 MHz. Comparing with other presented work, the proposed circuit shows better temperature coefficient and Line regulation.
基金Supported by the National Natural Science Foundation of China(61604109)the National High-Tech R&D Program of China(2015AA042605)
文摘A lowtemperature coefficient（ TC） bandgap reference（ BGR） with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of BGR achieves fine adjustment step towards the reference voltage,while keeping optimal TC by utilizing large resistance to help layout match. The high-order curvature compensation realized by poly and p-diffusion resistors is introduced into the design to guarantee the temperature characteristic. Implemented in 180 nm technology,the proposed BGR has been simulated to have a power supply rejection ratio（ PSRR） of 91 dB@100 Hz. The calibration technique covers output voltage scope of 0. 49 V-0. 56 Vwith TC of 9. 45 × 10^（-6）/℃-9. 56 × 10^（-6）/℃ over the temperature range of-40 ℃-120 ℃. The designed BGR provides a reference voltage of 500 mV,with measured TC of 10. 1 × 10^（-6）/℃.
文摘A novel curvature-compensated CMOS bandgap voltage reference is presented. The reference utilizes two first order temperature compensations generated from the nonlinearity of the finite current gain β of vertical pnp bipolar transistor. The proposed circuit, designed in a standard 0.18 μm CMOS process, achieves a good temperature coefficient of 2.44 ppm/℃ with temperature range from --40℃ to 85 ℃, and about 4 mV supply voltage variation in the range from 1.4 V to 2.4 V. With a 1.8 V supply voltage, the power supply rejection ratio is -56dB at 10MHz.
基金supported by Natural Science Foundation of China (51741806, 51238002, 51720105001)Science Fund for Excellent Young Scholars of Jiangxi Province (20162BCB23038)Natural Science Foundation of Jiangxi Province (20161BAB206117)
文摘The effect of synthesis temperature and reaction time on the visible-light photocatalytic activity of hierarchical network-like SnIn4S8 microspheres was investigated by the low-temperature co-precipitation strategy. The preparation temperature and reaction time have great influence on the photocatalytic activity of SnIn4S8, and the optimal preparation temperature and reaction time are 70℃ and 3 h, respectively.The SnIn4S8 shows good reusability and high stability with no observable decrease of photocatalytic activity in five consecutive cycles.
文摘This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gainβof the bipolar junction transistor(BJT)and the temperature as well as reduce the influence of resistance-temperature dependency.Considering the degraded circuit performance caused by the process deviation,the trimmable module of the temperature coefficient(TC)is introduced to improve the circuit stability.The circuit has the advantages of simple structure,high linear stability,high TC accuracy,and trimmable TC.It consumes an area of 0.09 mm^(2)when fabricated by using the 0.25-μm complementary metal-oxide-semiconductor(CMOS)process.The proposed circuit achieves the simulated power supply rejection(PSR)of about-78.7 dB@1 kHz,the measured TC of~4.7 ppm/℃over a wide temperature range from-55℃to 125℃with the 2.5-V single-supply voltage,and the tested line regulation of 0.10 mV/V.Such a high-performance bandgap reference circuit can be widely applied in high-precision and high-reliability electronic systems.
基金Sponsored by the National"863"Program Project(2005AA501650)
文摘A new method to calculate the motor temperature rising in electric vehicle （EV） is proposed based on the stator resistance identification. The measure theory of the motor temperature rising with the stator resistance is discussed at first. An enhanced magnetism motor dynamic math model is built which is the research object. Then the resistance identification system model is built on the mutual model reference adaptive,system （MRAS） theory. The simulation diagram of the mutual MRAS model is constructed and the resistance identification performance is studied in different motor states. Simulation results indicate that the stator resistance identification model with the mutual MRAS is effective. At the same time, the identification of motor temperature rising is possible with the identification of the stator resistance.
文摘电源管理芯片在超过可承受温度范围工作时会对自身造成不同程度的损坏,过温保护电路对提高该类芯片的可靠性和鲁棒性具有重要作用。文中设计了一种具有温度过高关断和温度过低提醒等双重功能的高精度过温保护电路。利用正、负温度系数电压对芯片温度进行实时检测,并与带隙基准电路输出端的不同基准电压分别进行比较得到4个逻辑翻转点,进而通过高精度比较器电路和迟滞逻辑电路处理后,输出迟滞逻辑信号来控制芯片的工作状态或进行温度过低提醒。基于0.18μm BCD(Bipolar-Complementary Metal Oxied Semiconductor-Double diffused Metal Oxide Semiconductor)工艺设计并完成了相关仿真验证,仿真结果表明,在电源电压范围为3.0~5.5 V时,该电路输出端的迟滞逻辑翻转信号对应的温度阈值最大偏移量在0.3℃以内,具备较高的精度,可广泛集成于各种需要过温保护功能的电源管理芯片。
