摘要
基于0.18μm BCD工艺,提出了一种具有较低温度系数的高阶曲率补偿带隙基准源。在基本Kuijk带隙基准的结构基础上,利用VBE线性化法来进行高阶曲率补偿,同时保证流过补偿双极晶体管的电流也得到高阶补偿,两次高阶补偿使得带隙基准源的温度系数更低。根据仿真结果,该带隙基准电压在-55℃~125℃温度范围内,输出电压的最大压差为0.3766 mV,温度系数为1.762 ppm/℃,低频时电源抑制比(PSRR)为-73.9 dB。该带隙基准源已应用于某一高精度的低压差线性稳压器(LDO)中。
Based on the 0.18μm BCD process,a higher-order curvature compensation bandgap reference with low temperature coefficient is proposed.On the basis of the basic Kuijk bandgap reference structure,the VBE linearization method is used to perform high-order curvature compensation,while ensuring that the current flowing through the compensating bipolar transistor is also compensated for higher-order.The two higher-order compensations make the temperature coefficient of the bandgap reference source lower.According to simulation results,the bandgap reference voltage has a maximum voltage difference of 0.3766 mV over a temperature range of−55℃~125℃,a temperature coefficient of 1.762 ppm/℃,and a power supply rejection ratio(PSRR)of−73.9 dB at low frequencies.This bandgap reference source has been applied in a high-precision low-dropout linear regulator(LDO).
作者
黄朝轩
李现坤
魏敬和
Huang Chaoxuan;Li Xiankun;Wei Jinghe(The 58th Research Institute of China Electronics Technology Group,Wuxi 214035,China;National Key Laboratory for Integrated Circuits and Microsystems,Wuxi 214035,China)
出处
《电子技术应用》
2024年第10期7-13,共7页
Application of Electronic Technique
基金
江苏省自然科学基金(面上)(BK20211041)。
关键词
带隙基准源
高阶曲率补偿
温度系数
电源抑制比
VBE线性化
bandgap reference source
higher-order curvature compensation
temperature coefficient
power supply rejection ratio
VBE linearization
作者简介
黄朝轩(1998-),男,硕士研究生,主要研究方向:模拟集成电路设计。;李现坤(1987-),男,硕士研究生,工程师,主要研究方向:电源管理。;通信作者:魏敬和(1970-),男,博士研究生,研究员级高工,主要研究方向:系统集成、芯粒及存算一体技术,E-mail:pume1975_cnjs@sina.com。
