This paper implements the study on the Dose Rate Upset effect of PDSOI SRAM （Partially Depleted Silicon- On-Insulator Static Random Access Memory） with the Qiangguang-I accelerator in Northwest Institute of Nuclear ...This paper implements the study on the Dose Rate Upset effect of PDSOI SRAM （Partially Depleted Silicon- On-Insulator Static Random Access Memory） with the Qiangguang-I accelerator in Northwest Institute of Nuclear Technology. The SRAM （Static Random Access Memory） chips are developed by the Institute of Microelectronics of Chinese Academy of Sciences. It uses the full address test mode to determine the upset mechanisms. A specified address test is taken in the same time. The test results indicate that the upset threshold of the PDSOI SRAM is about l×10s Gy（Si）/s. However, there are a few bits upset when the dose rate reaches up to 1.58 x 109 Gy（Si）/s. The SRAM circuit can still work after the high level 3~ ray pulse. Finally, the upset mechanism is determined to be the rail span collapse by comparing the critical charge with the collected charge after γ ray pulse. The physical locations of upset cells are plotted in the layout of the SRAM to investigate the layout defect. Then, some layout optimizations are made to improve the dose rate hardened performance of the PDSOI SRAM.展开更多
Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator （FDSOI） devices with ultra-thin sensitive silicon layers down to 2.5...Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator （FDSOI） devices with ultra-thin sensitive silicon layers down to 2.5 rim. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above ~10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer （LET） of incident ions, and thus single event effect （SEE） responses, which pose great challenges for traditional error rate prediction methods.展开更多
文摘This paper implements the study on the Dose Rate Upset effect of PDSOI SRAM （Partially Depleted Silicon- On-Insulator Static Random Access Memory） with the Qiangguang-I accelerator in Northwest Institute of Nuclear Technology. The SRAM （Static Random Access Memory） chips are developed by the Institute of Microelectronics of Chinese Academy of Sciences. It uses the full address test mode to determine the upset mechanisms. A specified address test is taken in the same time. The test results indicate that the upset threshold of the PDSOI SRAM is about l×10s Gy（Si）/s. However, there are a few bits upset when the dose rate reaches up to 1.58 x 109 Gy（Si）/s. The SRAM circuit can still work after the high level 3~ ray pulse. Finally, the upset mechanism is determined to be the rail span collapse by comparing the critical charge with the collected charge after γ ray pulse. The physical locations of upset cells are plotted in the layout of the SRAM to investigate the layout defect. Then, some layout optimizations are made to improve the dose rate hardened performance of the PDSOI SRAM.
基金supported by the National Natural Science Foundation of China (Grant Nos. 11179003 and 10975164)
文摘Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator （FDSOI） devices with ultra-thin sensitive silicon layers down to 2.5 rim. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above ~10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer （LET） of incident ions, and thus single event effect （SEE） responses, which pose great challenges for traditional error rate prediction methods.
