摘要
研究了基于0.18μm部分耗尽型绝缘体上硅(PDSOI)工艺的静电放电(ESD)防护NMOS器件的高温特性。借助传输线脉冲(TLP)测试系统对该ESD防护器件在30~195℃内的ESD防护特性进行了测试。讨论了温度对ESD特征参数的影响,发现随着温度升高,该ESD防护器件的一次击穿电压和维持电压均降低约11%,失效电流也降低近9.1%,并通过对器件体电阻、源-体结开启电压、沟道电流、寄生双极结型晶体管(BJT)的增益以及电流热效应的分析,解释了ESD特征参数发生上述变化的原因。研究结果为应用于高温电路的ESD防护器件的设计与开发提供了有效参考。
The high-temperature characteristics of the NMOSFET with electrostatic discharge(ESD)protection based on the 0.18μm partially depleted silicon-on-insulator(PDSOI)technology were studied.The ESD protection characteristics in the temperature range of 30-195℃of the ESD protection device were measured by the transmission line pulse(TLP)test system.The effect of temperature on the ESD characteristic parameters was discussed.It is found that the first breakdown vol-tage and the holding voltage of the ESD protection device are both decreased by about 11%,and the fai-lure current also shows a degradation of nearly 9.1%with the increasing temperature.The reasons for the changes of the ESD characteristic parameters were explained by analyzing the body resistance,turn-on voltage of the source-body junction,channel current,the gain of the parasitic bipolar junction transistor(BJT)and current thermal effects of the device.The research results provide a useful reference for the design and development of ESD protection devices applied to the high-temperature circuit.
作者
王加鑫
李晓静
赵发展
曾传滨
李博
韩郑生
罗家俊
Wang Jiaxin;Li Xiaojing;Zhao Fazhan;Zeng Chuanbin;Li Bo;Han Zhengsheng;Luo Jiajun(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Science and Technology on Silicon Devices,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《半导体技术》
CAS
北大核心
2021年第3期210-215,共6页
Semiconductor Technology
基金
国家自然科学基金青年基金资助项目(61804168)。
作者简介
王加鑫(1996-),男,重庆人,硕士研究生,主要从事ESD器件的高温效应研究;通信作者:赵发展(1980-),男,河北唐山人,博士,研究员,主要从事高可靠性集成电路和分立器件的设计与评估,E-mail:zhaofazhan@ime.ac.cn;通信作者:李晓静,E-mail:lixiaojingl@ime.ac.cn。
