摘要
随着SOI器件尺寸不断缩小,单粒子效应敏感区域相对有源区比例增加,对于其敏感区域的机理研究显得越来越重要。本文利用软件对SOI MOSFET的敏感区域进行了3-D空间模拟,阐述了敏感区域的机理:截止NMOSFET的反偏漏结迫使单粒子轰击产生的电子空穴对分离,漏极迅速收集电子产生瞬时电流,空穴向体区漂移并在体区堆积,使体电势升高导致寄生三极管开启产生较长时间的放大电流。良好的体接触能够快速抽走堆积的空穴,抑制体电位的升高,降低漏极收集电流。
As the scaling down of the device, the ratio of sensitive area to single-event effect is increasing compared to active area. It＇s important to study the mechanism of the sensitive area of device structure. This paper uses 3-D TCAD software to simulate SOI NMOSFET, analyze the sensitive area. And conelude that the reverse bias drain junction compel the electronic-bole pairs to separate, the electronics are collected immediately by drain and a very shot time drain current is generated. The holes are drift and accumulate in body area to force the electrostatic potential to increase, then the parasitic npn transistor is on, a relative long time drain current is established. Therefore effective body contact can extract the holes accumulated in the body area, suppress the electrostatic potential to increase, decrease the drain current.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2008年第1期159-162,205,共5页
Nuclear Electronics & Detection Technology
作者简介
赵发展（1980-），男，河北玉田人，博士生从事SOI器件的抗辐照性能与测试的研究。
