The individual particles collected from a power station were analyzed by time of flight secondary ion mass spectrometry (TOF SIMS). The result indicates the presence of the polycyclic aromatic hydrocarbon (PAHs) as we...The individual particles collected from a power station were analyzed by time of flight secondary ion mass spectrometry (TOF SIMS). The result indicates the presence of the polycyclic aromatic hydrocarbon (PAHs) as well as the oxygenated one. They might be derived from the incomplete combustion of coals. SIMS has proved to be a rapid method for the qualitative analysis of PAHs and OPAHs absorbed on the aerosol particles. New perspectives for better understanding the SIMS spectra obtained from complex mixture such as environmental samples have been opened.展开更多
The depth profile of Br in ^(79)Br^(+) ion implanted lead-tin-telluride,Pb_(1-x)Sn_(x),was obtained by secondary ion mass spectrometry(SIMS).The SIMS profile has been compared with that obtained by our theoretical cal...The depth profile of Br in ^(79)Br^(+) ion implanted lead-tin-telluride,Pb_(1-x)Sn_(x),was obtained by secondary ion mass spectrometry(SIMS).The SIMS profile has been compared with that obtained by our theoretical calculation,in which a more realistic interatomic potential and reasonable electronic stopping power were used.The SIMS result agrees well with the theoretical calculation.展开更多
A serious problem in secondary ion mass spectrometry (SI MS ) analysis is its “matrix effect” that hinders the quantification of a certain species in a sample and consequently, appropriate corrective measures are ta...A serious problem in secondary ion mass spectrometry (SI MS ) analysis is its “matrix effect” that hinders the quantification of a certain species in a sample and consequently, appropriate corrective measures are taken to calibrate the secondary ion currents into respective concentrations for accu rate compositional analysis. Use of “calibration standards” is necessary for t his purpose. Detection of molecular MCs_n+ ions (M-element to be analyz ed , n=1, 2, 3,….) under Cs+ ion bombardment is a possible mean to minimiz e such matrix effect, enabling one to quantify without the need of calibration sta ndards. Our recent studies on MCs_n+ molecular ions aim towards the understanding of their formation mechanisms, which are important to know their e ffects on SIMS quantification. In-depth quantitative analysis is a major strength of SIMS for which ‘depth resolution’ is of significant relevance. The optimal choice of the impact pa rameters during SIMS analyses can play an effective role in obtaining data with ultra-high depth resolution. SIMS is possible at depth resolution in the nm or even sub-nm rang e, with quantifiable data obtained from the top monolayer onwards into the material. Wi th optimized experimental conditions, like extremely low beam current (down to ～10 nA), and low bombarding energy (below 1 keV), ultra-high depth resolution SIMS has e nabled interfacial composition analysis of ultra-thin films, quantum wells, heterostru ctures, etc. and complex low-dimensional structures with high precision and re peatability.展开更多
The Rutherford backscattering (RBS) spectra of N+-implanted GaAs are measured with a He+ ion beam of 2.1MeV. The backscattering yield along 【 100 】 aligned incidence increases with the increase in implanted doses. T...The Rutherford backscattering (RBS) spectra of N+-implanted GaAs are measured with a He+ ion beam of 2.1MeV. The backscattering yield along 【 100 】 aligned incidence increases with the increase in implanted doses. The depth profiles of nitrogen and arsenic are measured by secondary ion mass spectrometer (SIMS).The diffusion of nitrogen in the implanted layers is explained as interstitial migration. The damage is very severe during the ion implantation, and it can be recovered psrtly by annealing. The two-step annealing improves the effect obviously. The calculstion on distribution of damage shows that the recovery is proceeded from the inner side to the surface during the annealing. The mechanism of damage is discussed briefly.展开更多
基于聚焦性能对经颅磁线圈的影响,针对聚焦型线圈商用不足的问题,设计一种具有高聚焦性的单通道双梯形双层线圈。首先使用球头模型分析不同尺寸、相同结构的线圈性能,得到较优的线圈尺寸;为进一步提升聚焦度,再以中尺寸线圈为研究目标,...基于聚焦性能对经颅磁线圈的影响,针对聚焦型线圈商用不足的问题,设计一种具有高聚焦性的单通道双梯形双层线圈。首先使用球头模型分析不同尺寸、相同结构的线圈性能,得到较优的线圈尺寸;为进一步提升聚焦度,再以中尺寸线圈为研究目标,探讨五种不同结构的双层线圈与两种商用8字形线圈的性能差异,得到最优线圈的结构;最后使用50组存在个体差异性的真实脑模型进行仿真验证,分析球头模型结果的可靠性。仿真结果表明:使用球头模型时,优化后的新型线圈对比70 mm figure-8 coil的聚焦度提升了69.48%,刺激深度减少了27.18%;对比25 mm figure-8 coil的聚焦度提升了44.78%,刺激深度减少了8.5%;使用50组真实脑模型时,优化后的新型线圈对比70 mm figure-8 coil的聚焦度提升了62.07%,刺激深度减少了25.71%;对比25 mm figure-8 coil的聚焦度提升了39.49%,刺激深度减少了9.5%。两种模型仿真数据结果趋于一致,证实了仿真可靠性的同时也证明了新型线圈具有更强的刺激强度和聚焦度,能大大提升TMS治疗的安全性,减少不适感,同时单通道设计易于实现,具有较高的性能优势。展开更多
针对联合作战信息交换需求和多军兵种作战数据互联互通问题,采用指挥控制系统与仿真系统之间交互性标准(command and control systems-simulation systems interoperation,C2SIM)标准指导实现指挥控制系统、仿真系统和无人系统之间的高...针对联合作战信息交换需求和多军兵种作战数据互联互通问题,采用指挥控制系统与仿真系统之间交互性标准(command and control systems-simulation systems interoperation,C2SIM)标准指导实现指挥控制系统、仿真系统和无人系统之间的高效互操作。概述C2SIM的地位、作用和开发概况;介绍C2SIM逻辑数据模型开发方法;从C2SIM核心本体、领域本体扩展、本体到XML Schema的转换和参考实现等方面,分析C2SIM的关键技术问题;探讨C2SIM标准在北约近年中实兵演习中的应用情况;总结C2SIM的发展和影响,为我军标准化互操作技术的构建提供方法和技术上的启发和借鉴。结果表明,该研究可有效提高军事信息系统的开发能力和质量。展开更多
文摘The individual particles collected from a power station were analyzed by time of flight secondary ion mass spectrometry (TOF SIMS). The result indicates the presence of the polycyclic aromatic hydrocarbon (PAHs) as well as the oxygenated one. They might be derived from the incomplete combustion of coals. SIMS has proved to be a rapid method for the qualitative analysis of PAHs and OPAHs absorbed on the aerosol particles. New perspectives for better understanding the SIMS spectra obtained from complex mixture such as environmental samples have been opened.
基金Projects supported by the Science Fund of the Chinese Academy of Sciences。
文摘The depth profile of Br in ^(79)Br^(+) ion implanted lead-tin-telluride,Pb_(1-x)Sn_(x),was obtained by secondary ion mass spectrometry(SIMS).The SIMS profile has been compared with that obtained by our theoretical calculation,in which a more realistic interatomic potential and reasonable electronic stopping power were used.The SIMS result agrees well with the theoretical calculation.
文摘A serious problem in secondary ion mass spectrometry (SI MS ) analysis is its “matrix effect” that hinders the quantification of a certain species in a sample and consequently, appropriate corrective measures are taken to calibrate the secondary ion currents into respective concentrations for accu rate compositional analysis. Use of “calibration standards” is necessary for t his purpose. Detection of molecular MCs_n+ ions (M-element to be analyz ed , n=1, 2, 3,….) under Cs+ ion bombardment is a possible mean to minimiz e such matrix effect, enabling one to quantify without the need of calibration sta ndards. Our recent studies on MCs_n+ molecular ions aim towards the understanding of their formation mechanisms, which are important to know their e ffects on SIMS quantification. In-depth quantitative analysis is a major strength of SIMS for which ‘depth resolution’ is of significant relevance. The optimal choice of the impact pa rameters during SIMS analyses can play an effective role in obtaining data with ultra-high depth resolution. SIMS is possible at depth resolution in the nm or even sub-nm rang e, with quantifiable data obtained from the top monolayer onwards into the material. Wi th optimized experimental conditions, like extremely low beam current (down to ～10 nA), and low bombarding energy (below 1 keV), ultra-high depth resolution SIMS has e nabled interfacial composition analysis of ultra-thin films, quantum wells, heterostru ctures, etc. and complex low-dimensional structures with high precision and re peatability.
文摘The Rutherford backscattering (RBS) spectra of N+-implanted GaAs are measured with a He+ ion beam of 2.1MeV. The backscattering yield along 【 100 】 aligned incidence increases with the increase in implanted doses. The depth profiles of nitrogen and arsenic are measured by secondary ion mass spectrometer (SIMS).The diffusion of nitrogen in the implanted layers is explained as interstitial migration. The damage is very severe during the ion implantation, and it can be recovered psrtly by annealing. The two-step annealing improves the effect obviously. The calculstion on distribution of damage shows that the recovery is proceeded from the inner side to the surface during the annealing. The mechanism of damage is discussed briefly.
文摘基于聚焦性能对经颅磁线圈的影响,针对聚焦型线圈商用不足的问题,设计一种具有高聚焦性的单通道双梯形双层线圈。首先使用球头模型分析不同尺寸、相同结构的线圈性能,得到较优的线圈尺寸;为进一步提升聚焦度,再以中尺寸线圈为研究目标,探讨五种不同结构的双层线圈与两种商用8字形线圈的性能差异,得到最优线圈的结构;最后使用50组存在个体差异性的真实脑模型进行仿真验证,分析球头模型结果的可靠性。仿真结果表明:使用球头模型时,优化后的新型线圈对比70 mm figure-8 coil的聚焦度提升了69.48%,刺激深度减少了27.18%;对比25 mm figure-8 coil的聚焦度提升了44.78%,刺激深度减少了8.5%;使用50组真实脑模型时,优化后的新型线圈对比70 mm figure-8 coil的聚焦度提升了62.07%,刺激深度减少了25.71%;对比25 mm figure-8 coil的聚焦度提升了39.49%,刺激深度减少了9.5%。两种模型仿真数据结果趋于一致,证实了仿真可靠性的同时也证明了新型线圈具有更强的刺激强度和聚焦度,能大大提升TMS治疗的安全性,减少不适感,同时单通道设计易于实现,具有较高的性能优势。
文摘针对联合作战信息交换需求和多军兵种作战数据互联互通问题,采用指挥控制系统与仿真系统之间交互性标准(command and control systems-simulation systems interoperation,C2SIM)标准指导实现指挥控制系统、仿真系统和无人系统之间的高效互操作。概述C2SIM的地位、作用和开发概况;介绍C2SIM逻辑数据模型开发方法;从C2SIM核心本体、领域本体扩展、本体到XML Schema的转换和参考实现等方面,分析C2SIM的关键技术问题;探讨C2SIM标准在北约近年中实兵演习中的应用情况;总结C2SIM的发展和影响,为我军标准化互操作技术的构建提供方法和技术上的启发和借鉴。结果表明,该研究可有效提高军事信息系统的开发能力和质量。
