摘要
栅氧界面缺陷严重影响SiC MOSFET性能。开发了一种NO氧化后退火(POA)优化工艺,采用氮、氢、氧、氯四种元素组合钝化工艺,实现对SiC MOSFET栅氧界面缺陷的抑制。通过X射线光电子能谱(XPS)、二次离子质谱(SIMS)和电学测试,对工艺优化前后的SiC MOSFET栅氧界面缺陷类型及器件电学特性进行了分析。测试结果表明,采用传统NO POA工艺的SiC MOSFET退火后在栅氧化层和栅氧界面中存在大量缺陷,尤其是C相关缺陷,影响器件栅氧的绝缘特性。POA优化工艺对SiC MOSFET栅氧界面缺陷具有明显的抑制作用,可极大地提高N元素对栅氧界面缺陷的钝化效果,并且抑制了O空位的形成,进而提升了器件的可靠性和迁移率,降低了界面态密度,对器件性能起到了较好的优化效果。
Gate-oxide interface defects seriously affect the performance of SiC MOSFETs.A NO post-oxidation annealing(POA)optimization process was developed to achieve the suppression of gateoxide interface defects in SiC MOSFETs by using a combination of nitrogen,hydrogen,oxygen and chlorine passivation process.The types of gate-oxide interface defects and device electrical characteristics of SiC MOSFETs before and after process optimization were analyzed by X-ray photoelectron spectroscopy(XPS),secondary ion mass spectrometry(SIMS)and electrical tests.The test results show that there are a large number of defects in the gate oxide layer and gate-oxide interface of the SiC MOSFETs fabricated by the conventional NO POA process,especially C-related defects,which affect the insulation characteristics of the gate-oxide of the device.The POA optimization process has an obvious inhibition effect on the gate-oxide interface defects of SiC MOSFETs,which can greatly improve the passivation effect of N elements on gate-oxide interface defects,and inhibit the formation of O vacancies,which in turn enhances the reliability and mobility of the device,reduces the interface state density,and has a better optimization effect on the device performance.
作者
付兴中
刘俊哲
薛建红
尹志鹏
谭永亮
王德君
张力江
Fu Xingzhong;Liu Junzhe;Xue Jianhong;Yin Zhipeng;Tan Yongliang;Wang Dejun;Zhang Lijiang(The 13^(th)Research Institute,CETC,Shjiazhuang 050051,China;School of Control Science and Engineering,Dalian University of Technology,Dalian 116024,China)
出处
《半导体技术》
CAS
北大核心
2024年第12期1144-1152,共9页
Semiconductor Technology
作者简介
付兴中(1983-),男,山东菏泽人,硕士,高级工程师,主要从事化合物半导体研发和芯片质量管控等工作。
