摘要
介绍以高能紫外激光为光源的、研究 MIS 结构电荷特性的光Ⅰ-Ⅴ法。简述了该法实验原理、实验装置和测试方法;给出了由传统热氧化的 SiO_2介质膜和新型快速热氮化的 SiOxNy 膜(缩写为 RTNF)组成的 MIS 结构的光Ⅰ-Ⅴ实验数据、体电荷密度和平均分布中心的实验结果。并就该法优缺点、应用前景及改进途径作了讨论.
The Photo Ⅰ-Ⅴ method for investigating charge characteris-tics of MIS structure is introduced,of which our optical resource is high energy ultraviolet laser.The principle,experimental instruments and procedure of the test method are summarily accounted.As an experimental example,we present photo Ⅰ-Ⅴ data of MIS structure of both traditional SiO_2 and RTN SiO_2 insulators and the result about density and centroid of bulk trapped charge in
the insulators.The method is also discussed in terms of its convenience,development and applying prospect in China.
出处
《华南理工大学学报（自然科学版）》
EI
CAS
CSCD
1992年第2期50-58,共9页
Journal of South China University of Technology(Natural Science Edition)
基金
国家自然科学基金资助课题
关键词
电荷特性
MIS结构
光I-V法
charge density
dielectric films
nitrides
interfaces/MIS structure
photo Ⅰ-Ⅴ method
