摘要
利用中频交流磁控溅射方法 ,采用氧化锌铝陶瓷靶材 [w(ZnO) =98%、w(Al2 O3 ) =2 % ]制备了ZAO(ZnO∶Al)薄膜 ,观察了基体温度对ZAO薄膜的晶体结构、电学和光学性能的影响 ,采用X射线衍射仪对薄膜的结构进行了分析 ,采用光学分度计和电阻测试仪测量了薄膜的光学、电学特性 ,采用霍尔测试仪测量了薄膜的载流子浓度和霍尔迁移率。结果表明 :沉积薄膜时的基体温度对薄膜的结构、结晶状况、可见光透射率以及导电性有较大的影响。当基体温度为 2 5 0℃ ,Ar分压为 0 8Pa时 ,薄膜的最低电阻率为 4 6× 10 -4Ω·cm ,方块电阻为 35Ω时 ,可见光 (λ =5 5 0nm)透射率高达 92 0 %。
ZAO(ZnO∶Al) transparent conductive thin films have been prepared by middle frequency alternative magnetron sputtering with ZAO [ w (ZnO)=98% and w (Al 2O 3)=2%] ceramic target.The influence of substrate temperature on the microstructures,optical and electrical properties of ZAO films have been studied.The visible transmittance,carrier concentration and Hall mobility were investigated by UV VIS and Van der Pauw,respectively,while microstructures has been characterized by X ray diffraction (XRD).The results show that the substrate temperature is a dominant factor for variable microstructures,optical and electrical properties of the ZAO thin films.The lowest resistivity obtained in this study was 4 6×10 -4 Ω·cm for the film with visible ( λ =550 nm) transmittance of 92.0% and a square resistance of 35 Ω,which was deposited at the substrate temperature of 250 ℃ and the operation gas pressure of 0.8 Pa.
出处
《真空科学与技术》
EI
CSCD
北大核心
2003年第1期12-15,共4页
Vacuum Science and Technology
基金
国家"8 63"高技术 (No 2 0 0 1AA5 13 0 2 4)
清华大学机械工程学院"985"基础研究基金资助
