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掺锆氧化锌透明导电薄膜的制备及特性研究 被引量:3

Deposition and Properties of Transparent Conducting Zirconium-Doped Zinc Oxide Films
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摘要 利用射频磁控溅射法在室温水冷玻璃衬底上成功地制备出了掺锆氧化锌(ZnO∶Zr)透明导电薄膜。研究了溅射功率对ZnO∶Zr薄膜结构、形貌和光电性能的影响。研究结果表明,溅射功率对ZnO∶Zr薄膜的结构和电阻率有显著影响。X射线衍射(XRD)表明,ZnO∶Zr薄膜为六角纤锌矿结构的多晶薄膜,且具有C轴择优取向。在溅射功率为150 W时,实验获得的ZnO∶Zr薄膜电阻率具有最小值3.8×10-3Ω.cm。实验制备的ZnO∶Zr薄膜具有良好的附着性能,可见光区平均透过率超过92%。ZnO∶Zr薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。 Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity were successfully prepared by radio frequency magnetron sputtering at room temperature. The effect of sputtering power on the structures, morphologies and optic-electronic properties of ZnO:Zr films was investigated. The experimental results show that sputtering power is an important factor to the crystal structure and optic-electronic properties of ZnO : Zr films. XRD studies reveal that all the films are polycrystalline with a hexagonal structure and a preferred orientation along the C-axis. The lowest resistivity achieved is 3.8×10^-3 Ω·cm at a sputtering power of 150 W. All the films present a high transmittance of above 92% in the visible range. ZnO:Zr films with high transparency and relatively low resistivity deposited at room temperature will be used as transparent electrode in thin film solar cells and liquid crystal display.
出处 《半导体技术》 CAS CSCD 北大核心 2008年第11期991-994,共4页 Semiconductor Technology
基金 山东理工大学功能材料创新团队支持计划项目(2006)
关键词 掺锆氧化锌 透明导电薄膜 磁控溅射 溅射功率 zirconium-doped zinc oxide transparent conducting films magnetron sputtering sputtering power
作者简介 刘汉法(1963-),男,山东潍坊人,副教授,主要从事光电子技术方面的研究工作; 张化福(1977-),男,山东新泰人,讲师,主要从事平板显示和镀膜技术方面的研究工作; 类成新(1976-),男,山东新泰人,讲师,主要从事光电子技术方面的研究。
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参考文献14

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共引文献70

同被引文献27

  • 1余旭浒,马瑾,计峰,王玉恒,王翠英,马洪磊.射频磁控溅射制备ZnO∶Ga透明导电膜及特性[J].Journal of Semiconductors,2005,26(2):314-318. 被引量:15
  • 2邓雷磊,吴孙桃,李 静.ZnO薄膜的制备和结构特性及应变[J].发光学报,2006,27(6):922-926. 被引量:4
  • 3吕茂水,庞智勇,修显武,戴瑛,韩圣浩.Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering[J].Chinese Physics B,2007,16(2):548-552. 被引量:17
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  • 8QADRI S B, KIM H, KHAN H R, et al. Transparent conducting films of In203-ZrO2, SnO2-ZrO2 and ZnO-ZrO2 [J]. Thin Solid Films, 2000,377-378 : 750-754.
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