摘要
为了改善镁合金微弧氧化层(MAO)的导电性能,以次亚磷酸钠为还原剂,柠檬酸钠为主络合剂,四羟丙基乙二胺(THPED)为添加剂,在AZ31B镁合金MAO陶瓷层上制备了化学镀铜层。利用SEM、XRD、EDS、电化学试验及四探针测试等手段研究了复合膜层的微观结构、相组成、导电性和反应过程。结果表明:镀铜层的沉积速率随着THPED占比的增加呈现先增大后减小的趋势。络合剂的最佳配比为柠檬酸钠16 g/L、THPED 4g/L,此时铜镀层与MAO层紧密结合,电阻率为4.89×10^(-3)mΩ·cm。电化学结果显示,镍离子的加入会促进铜离子还原反应的进行,THPED占比较小时会促进还原反应的进行,但当THPED超过4 g/L时,会对还原反应起到抑制作用。
In order to improve the electrical conductivity of micro-arc oxidation(MAO)layer of magnesium alloy,the electroless copper plating layer on the MAO layer of AZ31B magnesium alloy was prepared by using sodium hypophosphite as reducing agent,sodium citrate as complexing agent,and THPED as additive.The microstructure,phase composition,conductivity and reaction process of the composite film were studied by SEM,XRD,EDS,electrochemical experiments and four-probe test.The results show that the deposition rate of copper plating layer increases first and then decreases with the increase of THPED proportion.The best ratio of complexation agent is sodium citrate of 16 g/L and THPED of 4g/L,and the copper coating is tightly bonded with MAO layer with a resistivity of 4.89×10^(-3)mΩ·cm.The electrochemical results show that the addition of nickel ions promote the reduction reaction of copper ions,a small proportion of THPED can promote the reduction reaction,but when the THPED proportion exceeds 4 g/L,it can inhibit the reduction reaction.
作者
晁盛远
陈源
CHAO Shengyuan;CHEN Yuan(Naval Equipment Department,Xi'an 710000,China;School of Materials Science and Engineering,Xi'an University of Technology,Xi'an 710048,China)
出处
《热加工工艺》
北大核心
2025年第17期161-166,173,共7页
Hot Working Technology
关键词
镁合金
微弧氧化层
化学镀铜
四羟丙基乙二胺(THPED)
magnesium alloy
micro-arc oxidation layer
electroless copper plating
tetrahydroxypropyl ethylenediamine(THPED)
作者简介
晁盛远,男,工程师,主要研究方向:表面技术。
