摘要
采用有籽晶的高压布里奇曼法生长出CdSe单晶,并对不同Se添加量的CdSe单晶进行了性能研究。结果表明,添加的Se填充了单晶中的V_(Se),降低了Cd/Se质量比,并未影响晶体的Raman特征峰。进而对添加Se的CdSe晶体的电学性能、光学性能和夹杂相进行了分析,数据表明,添加的Se填充V_(Se)后,降低了CdSe单晶中的自由载流子浓度,提升了单晶电阻率,减弱了自由载流子对红外光子的吸收,同时添加Se增强了CdSe单晶结构的稳定性,降低了夹杂相密度,二者协同作用,优化了CdSe单晶的电学和光学性能,CdSe单晶呈现出高电阻率,达到10^(8)Ω·cm以上,8~12μm波段红外透过率提升到69%,为其在长波红外固体激光器等领域的应用提供了借鉴意义。
In this paper,CdSe single crystals were grown by high-pressure Bridgman method with a seed.The properties of a series of Se-added single crystal CdSe were studied.The results show that the added selenium atom fills the selenium vacancies(V_(Se)),which reduced Cd/Se mass ratio,and the position of Raman peak of the CdSe single crystals are not affected.Furthermore,electrical properties,optical properties and inclusion of Se-added CdSe single crystal were analyzed.The results indicate that after the selenium fills the V_(Se),the free carrier concentration in CdSe single crystals reduces,the resistivity increases,the free carrier absorption of infrared photons is weakened,the structural stability of CdSe single crystals is improved,and the inclusion density reduces.The synergistic effect of these two factors improves the electrical and optical properties of CdSe single crystals.The resistivity increases to more than 10^(8)Ω·cm,and the infrared(IR)transmittance in 8~12μm reaches to 69%.The research provides reference significance for the application of CdSe in longwave IR solid-state lasers and other fields.
作者
窦瑛
王英民
高彦昭
程红娟
DOU Ying;WANG Yingmin;GAO Yanzhao;CHENG Hongjuan(CETC Key Laboratory of Advanced Semiconductor Crystal Materials and Technologies,the 46th Research Institute,China Electronics Technology Group Corporation,Tianjin 300220,China)
出处
《人工晶体学报》
北大核心
2025年第8期1403-1409,共7页
Journal of Synthetic Crystals
关键词
CdSe单晶
添加Se
电阻率
红外透过率
夹杂相密度
电学性能
光学性能
CdSe single crystal
selenium addition
resistivity
IR transmittance
inclusion density
electrical property
optical property
作者简介
窦瑛(1987-),女,山西省人,硕士,高级工程师。E-mail:dyadw@126.com;通信作者:程红娟,教授。E-mail:xiemn08@126.com。
