摘要
采用垂直无籽晶气相法(VUVG)生长出尺寸达φ26mm×45mm的CdSe单晶体,对CdSe晶体的稳态气相生长速率进行了深入讨论。采用气相升华法提纯后的CdSe多晶原料的X射线粉末衍射谱与PDF卡片值(65-3436)吻合,生长出的单晶体{100}和(110)面XRD衍射峰尖锐,无杂峰,且{100}面出现3级衍射峰。晶锭密度为5.74g/cm3,与理论计算值接近。退火处理后的晶片在1000～7000cm-1红外波段范围内透过率达到70%。采用VUVG法生长的CdSe单晶体,结晶性能好、结构致密、尺寸大和红外透过率高,可用于制备红外非线性光学器件。
The CdSe crystal was grown by the vertical unseeded vapor phase pulling technique. Size of the crystal ingot was up to 26 mm in diameter and 45 mm in length. Meanwhile the stationary vapor growth rate of the crystal had been studied deeply. The X-ray powder diffraction spectrum of the purified materials agreed with the PDF card （65-3436）. The structure, density and optical properties of the CdSe singe crystal were characterized by XRD, analysis blanance and IR prestige-21 spectrophotometer respectively. The results show that the crystal was suitable to make nonlinear optical devices due to its good integrality, large size and high IR transmittance.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2009年第2期326-329,345,共5页
Journal of Synthetic Crystals
基金
国家863计划课题(2202AA325030)资助
关键词
CdSe单晶
气相生长
VUVG法
性能表征
CdSe single crystal
vapor growth
VUVG method
properties characterization
作者简介
曾体贤（1979-），男，四川省人，博士研究生。
通讯作者：赵北君，教授，博士生导师。E—mail：bjzhao@scu．edu．cn
