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铜镀镍基底生长碳纳米管薄膜场发射特性研究 被引量:1

Synthesis of CNT Film on Cu/Ni Substrate and Study of Its Field Emission Characteristics
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摘要 采用化学镀的方法在铜基底上镀镍作为缓冲层,以酞菁铁(FePc)作为催化剂,采用CVD法在Cu/Ni基底上制备出了碳纳米管薄膜(Cu/Ni-CNTs),利用扫描电镜(SEM)和拉曼光谱进行了表征。为了测试在Cu/Ni基底上生长碳纳米管薄膜的场发射特性,采用二极管结构,在真空度为2×10^(-4) Pa下进行直流场发射测试。结果表明Cu/Ni基底的碳纳米管薄膜具有优异的场发射特性,薄膜与阳极距离为9mm时开启场强为1.44V/μm,场发射测试数据符合Fowler-Nordheim(F-N)场发射特性曲线,在相同高压范围(0~20kV)进行多次重复测试,碳纳米管薄膜具有良好的发射可重复性。 Carbon nanotube(CNT)film was synthesized by using chemical vapor deposition technique with FePc as catalyst on Cu/Ni substrate,which was formed by the deposition of Nickel as a buffer layer on copper plate using electroless plating method.The as-grown Cu/Ni-CNT film was characterized by scanning electron microscopy and Raman spectroscopy.And its field emission property was measured using a diode structure in a vacuum chamber under a pressure of 2×10^(-4)Pa.The Cu/Ni-CNT film exhibits excellent field emission property.The turn-on electrical field is 1.44V/μm when the distance between the film and the anode is 9 mm.The field emission curve of the Cu/Ni-CNT film complies with Fowler-Nordheim field emission theory.It is demonstrated by the repeated measurements under the same high voltage range(0-20kV)that the Cu/Ni-CNT has good emission repeatability.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2016年第5期429-433,共5页 Research & Progress of SSE
基金 国家自然科学基金资助项目(61274012 11404291) 河南省科技创新杰出人才项目(164200510006) 航空科学基金资助项目(2014ZF55013 2015ZF55013) 河南省高等学校重点科研项目计划(16B140005)
关键词 碳纳米管 铜镀镍 直流场发射 Carbon nanotubes(CNTs) Cu/Ni DC field emission
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